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Title: Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity

Abstract

Some radiative and electric properties of heterostructures based on semiconductor nitrides emitting in the visible and UV regions are considered. The following anomalous properties of UV-emitting heterostructures are studied: the low-temperature emission quenching, a strong non-ideality of I-V curves, and the increase in the slope of these characteristics upon cooling. The anomalous emission quenching is especially typical for {approx}3-nm thick single-quantum-well structures, but it is absent in a 50-nm thick double heterostructure. It seems that this difference is caused by the fact that the capture of carriers at the levels in quantum wells slows down upon cooling, and a 'through' injection of carriers occurs into the opposite emitter layer. In addition, electrons injected into the p region reduce its resistance. The consideration of the injection-induced conductivity in the passive layer allows us to explain satisfactorily the electric anomalies. (active media)

Authors:
 [1]; ;  [2]
  1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  2. Centre for High-Technology Materials, University of New Mexico, Albuquerque (United States)
Publication Date:
OSTI Identifier:
21470663
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 34; Journal Issue: 12; Other Information: DOI: 10.1070/QE2004v034n12ABEH002788; Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ELECTRICAL PROPERTIES; ELECTRONS; EMISSION; NITRIDES; OPTICAL PROPERTIES; QUANTUM WELLS; QUENCHING; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; ULTRAVIOLET RADIATION; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; NANOSTRUCTURES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; TEMPERATURE RANGE

Citation Formats

Eliseev, P G, Lee, J, and Osinski, M A. Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity. United States: N. p., 2004. Web. doi:10.1070/QE2004V034N12ABEH002788.
Eliseev, P G, Lee, J, & Osinski, M A. Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity. United States. https://doi.org/10.1070/QE2004V034N12ABEH002788
Eliseev, P G, Lee, J, and Osinski, M A. 2004. "Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity". United States. https://doi.org/10.1070/QE2004V034N12ABEH002788.
@article{osti_21470663,
title = {Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity},
author = {Eliseev, P G and Lee, J and Osinski, M A},
abstractNote = {Some radiative and electric properties of heterostructures based on semiconductor nitrides emitting in the visible and UV regions are considered. The following anomalous properties of UV-emitting heterostructures are studied: the low-temperature emission quenching, a strong non-ideality of I-V curves, and the increase in the slope of these characteristics upon cooling. The anomalous emission quenching is especially typical for {approx}3-nm thick single-quantum-well structures, but it is absent in a 50-nm thick double heterostructure. It seems that this difference is caused by the fact that the capture of carriers at the levels in quantum wells slows down upon cooling, and a 'through' injection of carriers occurs into the opposite emitter layer. In addition, electrons injected into the p region reduce its resistance. The consideration of the injection-induced conductivity in the passive layer allows us to explain satisfactorily the electric anomalies. (active media)},
doi = {10.1070/QE2004V034N12ABEH002788},
url = {https://www.osti.gov/biblio/21470663}, journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 12,
volume = 34,
place = {United States},
year = {Fri Dec 31 00:00:00 EST 2004},
month = {Fri Dec 31 00:00:00 EST 2004}
}