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Title: Efficient lasing of a Cr{sup 2+} : ZnSe crystal grown from a vapour phase

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ; ;  [1]
  1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

The lasing characteristics of a Cr{sup 2+} : ZnSe crystal grown by the method of free growth on a single-crystal seed using physical transport in helium are studied. The crystal was doped from a vapour phase during its growth. The achieved concentration of dopant Cr{sup 2+} ions (5x10{sup 18} cm{sup -3}) provides the absorption coefficient of 4.5 cm{sup -1} at the maximum of the pump band (1.78 {mu}m). Upon pumping by a pulsed Co : MgF{sub 2} laser at 1.67 {mu}m, the slope efficiency equal to 59 % with respect to the absorbed energy was achieved, which corresponds to the quantum efficiency 87 %. (lasers)

OSTI ID:
21470319
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 33, Issue 5; Other Information: DOI: 10.1070/QE2003v033n05ABEH002425; ISSN 1063-7818
Country of Publication:
United States
Language:
English