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Title: Mechanism of lasing at the 5s{sup 22}D{sub 5/2} - 5p {sup 2}P{sub 3/2} transition in Cd II at anomalously low temperatures of the active medium

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
 [1]
  1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

The mechanism of lasing at the Cd II atomic ion transition at 441.6 nm at near-threshold temperatures, when the contribution from the sputtering of a pure metallic cadmium film by charged products of nuclear reaction cannot be neglected, is discussed. A comparison of the theoretical and experimental data leads to a value 10.8 atoms per event for the total average yield of sputtering of cadmium by the products of nuclear reaction {sup 3}He(n, p){sup 3}T. (lasers)

OSTI ID:
21470305
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 33, Issue 4; Other Information: DOI: 10.1070/QE2003v033n04ABEH002409; ISSN 1063-7818
Country of Publication:
United States
Language:
English