Defect-deformation mechanism of spontaneous nucleation of an ensemble of pores in solids and its experimental verification
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Department of Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow region, Chernogolovka (Russian Federation)
The defect-deformation (DD) mechanism of spontaneous formation of ensembles of seed pores during etching of semiconductors and metals is developed. The mechanism is based on the concept of generation and DD self-organisation of interstices and vacancies during etching. For p-Si, good agreement between theoretical and experimental results is obtained. In particular, a quasi-hexagonal order in the arrangement of micropores on the surface is revealed, which was predicted by the DD model, and a control of the properties of the ensemble by means of external forces is demonstrated. (letters)
- OSTI ID:
- 21470177
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 32, Issue 6; Other Information: DOI: 10.1070/QE2002v032n06ABEH002225; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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