Reduction of native oxides on InAs by atomic layer deposited Al{sub 2}O{sub 3} and HfO{sub 2}

Journal Article · Mon Sep 27 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3495776· OSTI ID:21466937

Timm, R; Fian, A; Hjort, M; Thelander, C; Lind, E; Andersen, J N; Wernersson, L -E; Mikkelsen, A ^[1]

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1. Department of Physics, Nanometer Structure Consortium, Lund University, P.O. Box 118, 22 100 Lund (Sweden)

Thin high-{kappa} oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al{sub 2}O{sub 3} or HfO{sub 2} layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

• OSTI ID: 21466937
• Journal Information: Applied Physics Letters, Vol. 97, Issue 13; Other Information: DOI: 10.1063/1.3495776; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
DEPOSITION
DIELECTRIC MATERIALS
HAFNIUM OXIDES
INDIUM ARSENIDES
INTERFACES
LAYERS
OXIDATION
PHOTOEMISSION
REDUCTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTRON SPECTROSCOPY
EMISSION
FILMS
HAFNIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
REFRACTORY METAL COMPOUNDS
SECONDARY EMISSION
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS