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Title: Multiple growths of epitaxial lift-off solar cells from a single InP substrate

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3479906· OSTI ID:21466916
 [1];  [1]; ;  [1];  [2]
  1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)

We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of {eta}{sub p}=14.4{+-}0.4% and {eta}{sub p}=14.8{+-}0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

OSTI ID:
21466916
Journal Information:
Applied Physics Letters, Vol. 97, Issue 10; Other Information: DOI: 10.1063/1.3479906; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English