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Title: Electron spin resonance of Zn{sub 1-x}Mg{sub x}O thin films grown by plasma-assisted molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3477951· OSTI ID:21466911
; ;  [1];  [1]; ;  [2];  [3]
  1. Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)
  2. Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching (Germany)
  3. I. Physikalisches Institut, Justus-Liebig-Universitaet, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

Zn{sub 1-x}Mg{sub x}O thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn{sub 1-x}Mg{sub x}O epitaxial layers and their anisotropy were determined experimentally and an increase from g{sub ||}=1.957 for x=0 to g{sub ||}=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the Al{sub x}Ga{sub 1-x}N system is also given.

OSTI ID:
21466911
Journal Information:
Applied Physics Letters, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.3477951; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English