Evolution of pyramid morphology during InAs(001) homoepitaxy
Abstract
Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 {mu}m{sup 2}. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.
- Authors:
-
- Research Centre for Integrated Quantum Electronics, Hokkaido University, Sapporo 0608628 (Japan)
- Publication Date:
- OSTI Identifier:
- 21466895
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 7; Other Information: DOI: 10.1063/1.3481077; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DESORPTION; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR MATERIALS; SURFACES; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; PNICTIDES; SORPTION
Citation Formats
Babu, J Bubesh, and Yoh, Kanji. Evolution of pyramid morphology during InAs(001) homoepitaxy. United States: N. p., 2010.
Web. doi:10.1063/1.3481077.
Babu, J Bubesh, & Yoh, Kanji. Evolution of pyramid morphology during InAs(001) homoepitaxy. United States. https://doi.org/10.1063/1.3481077
Babu, J Bubesh, and Yoh, Kanji. 2010.
"Evolution of pyramid morphology during InAs(001) homoepitaxy". United States. https://doi.org/10.1063/1.3481077.
@article{osti_21466895,
title = {Evolution of pyramid morphology during InAs(001) homoepitaxy},
author = {Babu, J Bubesh and Yoh, Kanji},
abstractNote = {Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 {mu}m{sup 2}. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.},
doi = {10.1063/1.3481077},
url = {https://www.osti.gov/biblio/21466895},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 97,
place = {United States},
year = {Mon Aug 16 00:00:00 EDT 2010},
month = {Mon Aug 16 00:00:00 EDT 2010}
}
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