Evolution of pyramid morphology during InAs(001) homoepitaxy

Journal Article · Mon Aug 16 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3481077· OSTI ID:21466895

Babu, J Bubesh; Yoh, Kanji ^[1]

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1. Research Centre for Integrated Quantum Electronics, Hokkaido University, Sapporo 0608628 (Japan)

Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 {mu}m{sup 2}. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.

• OSTI ID: 21466895
• Journal Information: Applied Physics Letters, Vol. 97, Issue 7; Other Information: DOI: 10.1063/1.3481077; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DESORPTION
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SEMICONDUCTOR MATERIALS
SURFACES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EPITAXY
INDIUM COMPOUNDS
MATERIALS
MICROSCOPY
PNICTIDES
SORPTION