Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si
Abstract
The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.
- Authors:
-
- College of Physics Science and Technology, China University of Petroleum, Dongying, Shandong 257061 (China)
- Publication Date:
- OSTI Identifier:
- 21466886
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 6; Other Information: DOI: 10.1063/1.3478230; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; AMORPHOUS STATE; CARBON; DEPOSITION; DOPED MATERIALS; EFFICIENCY; HETEROJUNCTIONS; LAYERS; N-TYPE CONDUCTORS; PALLADIUM; PHOTOVOLTAIC EFFECT; SILICON; SILICON OXIDES; SILICON SOLAR CELLS; SPUTTERING; SUBSTRATES; THIN FILMS; CHALCOGENIDES; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; PLATINUM METALS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; TRANSITION ELEMENTS
Citation Formats
Ming, Ma, Qingzhong, Xue, Huijuan, Chen, Xiaoyan, Zhou, Dan, Xia, Cheng, Lv, and Jie, Xie. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si. United States: N. p., 2010.
Web. doi:10.1063/1.3478230.
Ming, Ma, Qingzhong, Xue, Huijuan, Chen, Xiaoyan, Zhou, Dan, Xia, Cheng, Lv, & Jie, Xie. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si. United States. https://doi.org/10.1063/1.3478230
Ming, Ma, Qingzhong, Xue, Huijuan, Chen, Xiaoyan, Zhou, Dan, Xia, Cheng, Lv, and Jie, Xie. 2010.
"Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si". United States. https://doi.org/10.1063/1.3478230.
@article{osti_21466886,
title = {Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si},
author = {Ming, Ma and Qingzhong, Xue and Huijuan, Chen and Xiaoyan, Zhou and Dan, Xia and Cheng, Lv and Jie, Xie},
abstractNote = {The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.},
doi = {10.1063/1.3478230},
url = {https://www.osti.gov/biblio/21466886},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 6,
volume = 97,
place = {United States},
year = {Mon Aug 09 00:00:00 EDT 2010},
month = {Mon Aug 09 00:00:00 EDT 2010}
}
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