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Title: Spectral dependence of absorption photoinduced in a Bi{sub 12}TiO{sub 20} crystal by 532-nm laser pulses

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
;  [1]; ; ; ; ;  [2]; ;  [3]
  1. Belarusian State University, Minsk (Belarus)
  2. Tomsk State University of Control Systems and Radioelectronics, Tomsk (Russian Federation)
  3. Institute for Automation and Control Processes, Far-Eastern Branch, Russian Academy of Sciences, Vladivostok (Russian Federation)

The spectral dependences of absorption photoinduced in a pure bismuth titanium oxide crystal by 532-nm laser pulses are studied. It is shown that optical absorption in the crystal in the range from 492 to 840 nm increases with increasing exposure. The photoinduced absorption relaxes in the dark for more than 60 hours. A model of photoinduced absorption is proposed which assumes the population of two trap centres with the normal energy distribution law for the concentrations of electrons photoexcited from donors to the conduction band. This model well describes the spectral dependences of photoinduced absorption by using the average ionisation energies of the traps E{sub 1} = 1.60 eV and E{sub 2} = 2.57 eV. The model is used to estimate the increase in the photorefractive sensitivity of a bismuth titanium oxide crystal in the near IR region, which was earlier observed after exposing the crystal to visible radiation. It is predicted that the speed of response of dynamic holography devices based on BTO crystals exposed to green light can be increased. (nonlinear optical phenomena)

OSTI ID:
21466748
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 37, Issue 11; Other Information: DOI: 10.1070/QE2007v037n11ABEH013371; ISSN 1063-7818
Country of Publication:
United States
Language:
English