Defects of a phosphosilicate glass exposed to the 193-nm radiation
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation)
Induced absorption is measured in a hydrogen-unloaded phosphosilicate glass (PSG) in spectral ranges from 140 to 850 nm and from 1000 to 1700 nm before and after its exposure to the 193-nm radiation. It is shown that the induced-absorption bands in the range between 140 and 300 nm do not coincide with the bands observed earlier after exposing a PSG to X-rays. It is assumed that the photorefractive effect in the PSG is related to variations induced in the glass network rather than to defects responsible for the induced-absorption bands. (fiber and integrated optics)
- OSTI ID:
- 21466680
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 37, Issue 6; Other Information: DOI: 10.1070/QE2007v037n06ABEH013485; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
Similar Records
Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation
Photoinduced absorption and refractive-index induction in phosphosilicate fibres by radiation at 193 nm
Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass
Journal Article
·
Fri Oct 31 00:00:00 EDT 2008
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21466680
Photoinduced absorption and refractive-index induction in phosphosilicate fibres by radiation at 193 nm
Journal Article
·
Mon Apr 30 00:00:00 EDT 2007
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21466680
+5 more
Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass
Journal Article
·
Tue Aug 03 00:00:00 EDT 2010
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21466680