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Title: Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment

Abstract

The parameters of laser radiation and kinetic processes of plasma formation and production of inverse population are studied. Electrophysical processes proceeding in a feed circuit containing a semiconductor opening switch and intermediate inductive energy storage are also considered. It is shown that the semiconductor opening switch controls the amount of energy in the inductive storage, and a high-voltage short prepulse with a peak pump power density of {approx}1 MW cm{sup -3} appearing during the current interruption can produce a volume-discharge plasma and create the inverse population for the time {approx}10 ns, providing the conditions for efficient pumping of the active medium from the main capacitor. The time dependences of the pump and emission powers, the concentrations of electrons, excited xenon atoms, HCl(v) molecules in excited vibrational states and of the ionisation, recombination, and attachment rates are calculated. Kinetic processes determining the parameters of laser radiation are analysed. The output energy up to 1.0 J is obtained for 90-ns (FWHM) pulses with the efficiency up to 4.0% with respect to the pump energy. The maximum output power was 11 MW for the lasing efficiency of 4.7% with respect to the pump power. The calculated and experimental time dependences of the voltagemore » across the laser gap, discharge current, and output power are in good agreement. (lasers)« less

Authors:
; ; ; ; ;  [1]
  1. Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences, Tomsk (Russian Federation)
Publication Date:
OSTI Identifier:
21466647
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 37; Journal Issue: 4; Other Information: DOI: 10.1070/QE2007v037n04ABEH013253
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITORS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; ENERGY STORAGE; HYDROCHLORIC ACID; IONIZATION; LASER RADIATION; LASERS; MOLECULES; OSCILLATORS; PLASMA PRODUCTION; POPULATION INVERSION; POWER DENSITY; PUMPING; RECOMBINATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; TIME DEPENDENCE; VIBRATIONAL STATES; XENON; XENON CHLORIDES; CHLORIDES; CHLORINE COMPOUNDS; CURRENTS; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; EQUIPMENT; EXCITED STATES; FERMIONS; FLUIDS; GASES; HALIDES; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; LEPTONS; MATERIALS; NONMETALS; RADIATIONS; RARE GAS COMPOUNDS; RARE GASES; SEMICONDUCTOR DEVICES; STORAGE; SWITCHES; XENON COMPOUNDS

Citation Formats

Bychkov, Yu I, Panchenko, Aleksei N, Tarasenko, Viktor F, Tel'minov, A E, Yampol'skaya, S A, and Yastremskii, A G. Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment. United States: N. p., 2007. Web. doi:10.1070/QE2007V037N04ABEH013253.
Bychkov, Yu I, Panchenko, Aleksei N, Tarasenko, Viktor F, Tel'minov, A E, Yampol'skaya, S A, & Yastremskii, A G. Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment. United States. doi:10.1070/QE2007V037N04ABEH013253.
Bychkov, Yu I, Panchenko, Aleksei N, Tarasenko, Viktor F, Tel'minov, A E, Yampol'skaya, S A, and Yastremskii, A G. Mon . "Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment". United States. doi:10.1070/QE2007V037N04ABEH013253.
@article{osti_21466647,
title = {Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment},
author = {Bychkov, Yu I and Panchenko, Aleksei N and Tarasenko, Viktor F and Tel'minov, A E and Yampol'skaya, S A and Yastremskii, A G},
abstractNote = {The parameters of laser radiation and kinetic processes of plasma formation and production of inverse population are studied. Electrophysical processes proceeding in a feed circuit containing a semiconductor opening switch and intermediate inductive energy storage are also considered. It is shown that the semiconductor opening switch controls the amount of energy in the inductive storage, and a high-voltage short prepulse with a peak pump power density of {approx}1 MW cm{sup -3} appearing during the current interruption can produce a volume-discharge plasma and create the inverse population for the time {approx}10 ns, providing the conditions for efficient pumping of the active medium from the main capacitor. The time dependences of the pump and emission powers, the concentrations of electrons, excited xenon atoms, HCl(v) molecules in excited vibrational states and of the ionisation, recombination, and attachment rates are calculated. Kinetic processes determining the parameters of laser radiation are analysed. The output energy up to 1.0 J is obtained for 90-ns (FWHM) pulses with the efficiency up to 4.0% with respect to the pump energy. The maximum output power was 11 MW for the lasing efficiency of 4.7% with respect to the pump power. The calculated and experimental time dependences of the voltage across the laser gap, discharge current, and output power are in good agreement. (lasers)},
doi = {10.1070/QE2007V037N04ABEH013253},
journal = {Quantum Electronics (Woodbury, N.Y.)},
number = 4,
volume = 37,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}
  • A planar e-beam diode with a strong magnetic field imposed normal to the electrode surfaces, has been found to operate as a fast opening switch when the electric field of the cathode was artificially enhanced with an array of needles as the emitting structure. Conduction times of hundreds on nanoseconds and voltages of order 400 kV are routinely achieved with this switch. Data from experiments using two different pulsed power drivers are presented along with a simple 1-D model to provide one possible mechanism to explain this observed behavior.
  • We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)
  • An analysis made on the basis of the theory of the self-consistent field shows the possibility of production of ultrashort sub-10-fs soliton-like pulses in a solid-state laser with a coherent semiconductor switch in the absence of mode-locking caused by self-focusing. Mode-locking caused by self-focusing leads to the formation of an extremely short sech-shaped pulse. In this case, the restriction imposed on the minimum modulation degree in a passive semiconductor switch that provides self-starting USP generation is lifted. (nonlinear optical phenomena)
  • The mechanism of operation of a semiconductor opening switch (a SOS diode) at the forward-pumping time of a microsecond and low current density was studied. The current's cutoff time shorter than 10 ns at the voltage across the SOS diode as high as 80 kV was obtained experimentally at the reverse-pumping time {approx}200 ns and the cutoff-current density of about 120 A/cm{sup 2}. These are the results of numerical simulation of processes in the dynamics of the electron-hole plasma in the diode at the stages of pumping and current cutoff. It is shown that the stage of the current cutoffmore » is similar to the conditions of the SOS effect observed at a high current density and is also related to motion of the concentration front of excess plasma along the heavily doped p-type region of the structure. In spite of the low density of current in the course of its cutoff, the switching process takes several nanoseconds. The reason is that the low current density is compensated by a low concentration of the excess plasma at the front, which retains the high velocity of motion of this front at the stage of the current cutoff.« less
  • The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm{sup 2} is studied. In experiments, the maximum reverse current density reached 43 kA/cm{sup 2} for {approx}40 ns. Experimental data on SOS diodes with a p{sup +}-p-n-n{sup +} structure and a p-n junction depth from 145 to 180 {mu}m are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin ({approx}45 {mu}m) layer ofmore » the structure's heavily doped p-region, in which the acceptor concentration exceeds 10{sup 16} cm{sup -3}, and the current cutoff process depends weakly on the p-n junction depth.« less