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Title: Determination of optimum Si excess concentration in Er-doped Si-rich SiO{sub 2} for optical amplification at 1.54 {mu}m

Abstract

The presence of indirect Er{sup 3+} excitation in Si-rich SiO{sub 2} is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er{sup 3+} ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be {approx}14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and {approx}11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 {mu}m in devices based on Er-doped Si-rich SiO{sub 2}.

Authors:
 [1];  [2];  [1]
  1. CREOL, College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States)
  2. Advanced Materials Processing and Analysis Center (AMPAC), University of Central Florida, Orlando, Florida 32816 (United States)
Publication Date:
OSTI Identifier:
21464564
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 97; Journal Issue: 20; Other Information: DOI: 10.1063/1.3518476; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CONCENTRATION RATIO; DEACTIVATION; DENSITY; DEPOSITION; DOPED MATERIALS; ERBIUM IONS; EXCITATION; EXCITED STATES; GAIN; NANOSTRUCTURES; SENSITIZERS; SILICON; SILICON OXIDES; SPUTTERING; THIN FILMS; AMPLIFICATION; CHALCOGENIDES; CHARGED PARTICLES; DIMENSIONLESS NUMBERS; ELEMENTS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; FILMS; HEAT TREATMENTS; IONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REAGENTS; SEMIMETALS; SILICON COMPOUNDS

Citation Formats

Savchyn, Oleksandr, Coffey, Kevin R, Department of Physics, University of Central Florida, Orlando, Florida 32816, Kik, Pieter G, and Department of Physics, University of Central Florida, Orlando, Florida 32816. Determination of optimum Si excess concentration in Er-doped Si-rich SiO{sub 2} for optical amplification at 1.54 {mu}m. United States: N. p., 2010. Web. doi:10.1063/1.3518476.
Savchyn, Oleksandr, Coffey, Kevin R, Department of Physics, University of Central Florida, Orlando, Florida 32816, Kik, Pieter G, & Department of Physics, University of Central Florida, Orlando, Florida 32816. Determination of optimum Si excess concentration in Er-doped Si-rich SiO{sub 2} for optical amplification at 1.54 {mu}m. United States. doi:10.1063/1.3518476.
Savchyn, Oleksandr, Coffey, Kevin R, Department of Physics, University of Central Florida, Orlando, Florida 32816, Kik, Pieter G, and Department of Physics, University of Central Florida, Orlando, Florida 32816. Mon . "Determination of optimum Si excess concentration in Er-doped Si-rich SiO{sub 2} for optical amplification at 1.54 {mu}m". United States. doi:10.1063/1.3518476.
@article{osti_21464564,
title = {Determination of optimum Si excess concentration in Er-doped Si-rich SiO{sub 2} for optical amplification at 1.54 {mu}m},
author = {Savchyn, Oleksandr and Coffey, Kevin R and Department of Physics, University of Central Florida, Orlando, Florida 32816 and Kik, Pieter G and Department of Physics, University of Central Florida, Orlando, Florida 32816},
abstractNote = {The presence of indirect Er{sup 3+} excitation in Si-rich SiO{sub 2} is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er{sup 3+} ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be {approx}14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and {approx}11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 {mu}m in devices based on Er-doped Si-rich SiO{sub 2}.},
doi = {10.1063/1.3518476},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 97,
place = {United States},
year = {2010},
month = {11}
}