Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

Journal Article · Mon Nov 01 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3511284· OSTI ID:21464542

Ku, Ching-Shun; Cheng, Ching-Yuan ^[1]; Huang, Jheng-Ming ^[2]; Lin, Chih-Ming ^[3]; Lee, Hsin-Yi ^[1]

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1. National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China)
2. Program for Science and Technology of Accelerator Light Source, National Chiao Tung University, Hsinchu 300, Taiwan (China)
3. Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan (China)

Optical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron x-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ x-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 deg. C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the outgassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra.

• OSTI ID: 21464542
• Journal Information: Applied Physics Letters, Vol. 97, Issue 18; Other Information: DOI: 10.1063/1.3511284; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
GRAIN GROWTH
HETEROJUNCTIONS
HYDROGEN
IONS
LAYERS
MASS SPECTRA
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
P-N JUNCTIONS
POLYCRYSTALS
SILICON
THIN FILMS
TIME-OF-FLIGHT METHOD
X-RAY DIFFRACTION
ZINC OXIDES
CHALCOGENIDES
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELEMENTS
EMISSION
FILMS
HEAT TREATMENTS
LUMINESCENCE
MATERIALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SPECTRA
ZINC COMPOUNDS