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Title: Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix

Abstract

We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al{sub 2}O{sub 3}. During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters.

Authors:
; ;  [1]; ; ;  [2]; ;  [3];  [4];  [5]
  1. University of Minho, Campus of Gualtar, 4710-057 Braga (Portugal)
  2. Ruder Boskovic Institute, Bijenicka cesta 54, 10000 Zagreb (Croatia)
  3. Forschungszentrum Dresden-Rossendorf, e.V., P.O. Box 510119, 01314 Dresden (Germany)
  4. Physics Centre, University of Essex, Colchester CO4 3SQ (United Kingdom)
  5. Sincrotrone Trieste, SS 14 km163, 5, 34012 Basovizza (Italy)
Publication Date:
OSTI Identifier:
21464539
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 97; Journal Issue: 17; Other Information: DOI: 10.1063/1.3499426; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; ANNEALING; ATOMS; CRYSTAL GROWTH; DEPOSITION; FILMS; GERMANIUM; MATRIX MATERIALS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SOLIDS; SPUTTERING; VOIDS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS

Citation Formats

Pinto, S R. C., Rolo, A G, Gomes, M J. M., Ivanda, M, Bogdanovic-Radovic, I, Buljan, M, Grenzer, J, Muecklich, A, Barber, D J, and Bernstorff, S. Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix. United States: N. p., 2010. Web. doi:10.1063/1.3499426.
Pinto, S R. C., Rolo, A G, Gomes, M J. M., Ivanda, M, Bogdanovic-Radovic, I, Buljan, M, Grenzer, J, Muecklich, A, Barber, D J, & Bernstorff, S. Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix. United States. https://doi.org/10.1063/1.3499426
Pinto, S R. C., Rolo, A G, Gomes, M J. M., Ivanda, M, Bogdanovic-Radovic, I, Buljan, M, Grenzer, J, Muecklich, A, Barber, D J, and Bernstorff, S. 2010. "Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix". United States. https://doi.org/10.1063/1.3499426.
@article{osti_21464539,
title = {Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix},
author = {Pinto, S R. C. and Rolo, A G and Gomes, M J. M. and Ivanda, M and Bogdanovic-Radovic, I and Buljan, M and Grenzer, J and Muecklich, A and Barber, D J and Bernstorff, S},
abstractNote = {We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al{sub 2}O{sub 3}. During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters.},
doi = {10.1063/1.3499426},
url = {https://www.osti.gov/biblio/21464539}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 97,
place = {United States},
year = {Mon Oct 25 00:00:00 EDT 2010},
month = {Mon Oct 25 00:00:00 EDT 2010}
}