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Title: Microwave properties of epitaxial (111)-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Al{sub 2}O{sub 3}(0001) up to 40 GHz

Abstract

Perovskite Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films have been grown on Al{sub 2}O{sub 3}(0001) substrates without/with inserting an ultrathin TiO{sub x} seeding layer by rf magnetron sputtering. X-ray diffraction and pole figure studies reveal that the film with the TiO{sub x} layer (12-A-thick) is highly oriented along the (111) direction and exhibits a good in-plane relationship of BST(111)||Al{sub 2}O{sub 3}(0001). The high frequency dielectric measurements demonstrate that the complex permittivity ({epsilon}={epsilon}{sup '}-j{epsilon}{sup ''}) is well described by a Curie-von Scheidler dispersion with an exponent of 0.40. The resulting epitaxial BST films show high permittivity ({approx}428) and tunability ({approx}41%, at 300 kV/cm and 40 GHz) and their microwave properties (1-40 GHz) potentially could be made suitable for tunable devices.

Authors:
 [1];  [2]; ; ;  [3]; ;  [1];  [4]
  1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
  2. (France)
  3. UMR CNRS 8520, IEMN-DOAE-MIMM Team, Bat. P3, Cite Scientifique, Villeneuve d'Ascq, 59655 Lille (France)
  4. CRISMAT-ENSICAEN, Universite de Caen Basse-Normandie, Campus 2-6, Bd. M. Juin, 14050 Caen (France)
Publication Date:
OSTI Identifier:
21464527
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 97; Journal Issue: 16; Other Information: DOI: 10.1063/1.3478015; (c) 2010 American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BARIUM COMPOUNDS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; EPITAXY; GHZ RANGE; LAYERS; MICROWAVE RADIATION; PERMITTIVITY; SPUTTERING; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ALKALINE EARTH METAL COMPOUNDS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; FREQUENCY RANGE; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Yang Lihui, UMR CNRS 8520, IEMN-DOAE-MIMM Team, Bat. P3, Cite Scientifique, Villeneuve d'Ascq, 59655 Lille, Ponchel, Freddy, Remiens, Denis, Legier, Jean-Fancois, Wang Genshui, Dong Xianlin, and Chateigner, Daniel. Microwave properties of epitaxial (111)-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Al{sub 2}O{sub 3}(0001) up to 40 GHz. United States: N. p., 2010. Web. doi:10.1063/1.3478015.
Yang Lihui, UMR CNRS 8520, IEMN-DOAE-MIMM Team, Bat. P3, Cite Scientifique, Villeneuve d'Ascq, 59655 Lille, Ponchel, Freddy, Remiens, Denis, Legier, Jean-Fancois, Wang Genshui, Dong Xianlin, & Chateigner, Daniel. Microwave properties of epitaxial (111)-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Al{sub 2}O{sub 3}(0001) up to 40 GHz. United States. doi:10.1063/1.3478015.
Yang Lihui, UMR CNRS 8520, IEMN-DOAE-MIMM Team, Bat. P3, Cite Scientifique, Villeneuve d'Ascq, 59655 Lille, Ponchel, Freddy, Remiens, Denis, Legier, Jean-Fancois, Wang Genshui, Dong Xianlin, and Chateigner, Daniel. Mon . "Microwave properties of epitaxial (111)-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Al{sub 2}O{sub 3}(0001) up to 40 GHz". United States. doi:10.1063/1.3478015.
@article{osti_21464527,
title = {Microwave properties of epitaxial (111)-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Al{sub 2}O{sub 3}(0001) up to 40 GHz},
author = {Yang Lihui and UMR CNRS 8520, IEMN-DOAE-MIMM Team, Bat. P3, Cite Scientifique, Villeneuve d'Ascq, 59655 Lille and Ponchel, Freddy and Remiens, Denis and Legier, Jean-Fancois and Wang Genshui and Dong Xianlin and Chateigner, Daniel},
abstractNote = {Perovskite Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films have been grown on Al{sub 2}O{sub 3}(0001) substrates without/with inserting an ultrathin TiO{sub x} seeding layer by rf magnetron sputtering. X-ray diffraction and pole figure studies reveal that the film with the TiO{sub x} layer (12-A-thick) is highly oriented along the (111) direction and exhibits a good in-plane relationship of BST(111)||Al{sub 2}O{sub 3}(0001). The high frequency dielectric measurements demonstrate that the complex permittivity ({epsilon}={epsilon}{sup '}-j{epsilon}{sup ''}) is well described by a Curie-von Scheidler dispersion with an exponent of 0.40. The resulting epitaxial BST films show high permittivity ({approx}428) and tunability ({approx}41%, at 300 kV/cm and 40 GHz) and their microwave properties (1-40 GHz) potentially could be made suitable for tunable devices.},
doi = {10.1063/1.3478015},
journal = {Applied Physics Letters},
number = 16,
volume = 97,
place = {United States},
year = {Mon Oct 18 00:00:00 EDT 2010},
month = {Mon Oct 18 00:00:00 EDT 2010}
}