skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Deep-ultraviolet photodetectors from epitaxially grown Ni{sub x}Mg{sub 1-x}O

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3503634· OSTI ID:21464525
; ; ; ;  [1]
  1. CREOL/College of Optics and Photonics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816 (United States)

Deep-ultraviolet (DUV) photodetectors were fabricated from high quality Ni{sub x}Mg{sub 1-x}O epitaxially grown by plasma-assisted molecular beam epitaxy on an approximately lattice matched MgO <100> substrate. A mid-range Ni composition (x=0.54) Ni{sub x}Mg{sub 1-x}O film was grown for DUV ({lambda}{sub peak}<300 nm) photoresponse and the film was characterized by reflected high-energy electron diffraction, Rutherford backscattering spectroscopy, x-ray diffraction, and optical transmission measurements. Photoconductive detectors were then fabricated by deposition of symmetric interdigitated contacts (10 nm Pt/150 nm Au) with contact separations of 5, 10, and 15 {mu}m. The detectors exhibited peak responsivities in the DUV ({lambda}{sub peak{approx_equal}}250 nm) as high as 12 mA/W, low dark currents (I{sub dark}<25 nA), and DUV:visible rejection ratio of approximately 800:1.

OSTI ID:
21464525
Journal Information:
Applied Physics Letters, Vol. 97, Issue 16; Other Information: DOI: 10.1063/1.3503634; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English