Semiconductor lasers: from homojunctions to quantum dots

Journal Article · Tue Dec 31 00:00:00 EST 2002 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2002V032N12ABEH002351· OSTI ID:21454785

Eliseev, P G ^[1]

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1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

A brief review of the development of physics and technology of semiconductor lasers, beginning from theoretical proposals made in the late 1950s up to now, is presented. For example, the threshold current density at room temperature, which was 10{sup 5} - 10{sup 6} A cm{sup -2} in 1963, has been now reduced to {approx}10 A cm{sup -2}. The main factors that have provided this progress are considered. The mechanisms of energy conversion determining the high efficiency of semiconductor lasers are discussed in detail. (special issue devoted to the 80th anniversary of academician n g basov's birth)

• OSTI ID: 21454785
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 32, Issue 12; Other Information: DOI: 10.1070/QE2002v032n12ABEH002351; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
EFFICIENCY
ENERGY CONVERSION
HOMOJUNCTIONS
QUANTUM DOTS
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
CONVERSION
CURRENTS
ELECTRIC CURRENTS
LASERS
NANOSTRUCTURES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
TEMPERATURE RANGE