skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Statistical features of degradation of heterojunction lasers during aging and upon irradiation

Abstract

Specific features of degradation of the GaAlAs and InGaAsP heterojunction lasers are studied during aging at 60 {sup 0}C and upon irradiation by fast particles. Analytic expressions are obtained that describe an increase in the dispersion of the threshold current distribution with the time of the operating-life test and the dose of irradiation by fast particles. (lasers)

Authors:
 [1]
  1. 22 Research Centre (Russian Federation)
Publication Date:
OSTI Identifier:
21454666
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 30; Journal Issue: 4; Other Information: DOI: 10.1070/QE2000v030n04ABEH001724; Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AGING; ANALYTIC FUNCTIONS; ARSENIDES; DISPERSIONS; HETEROJUNCTIONS; LASERS; PARTICLES; PHOSPHIDES; RADIATION EFFECTS; THRESHOLD CURRENT; ARSENIC COMPOUNDS; CURRENTS; ELECTRIC CURRENTS; FUNCTIONS; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS

Citation Formats

Kochetkov, A A. Statistical features of degradation of heterojunction lasers during aging and upon irradiation. United States: N. p., 2000. Web. doi:10.1070/QE2000V030N04ABEH001724.
Kochetkov, A A. Statistical features of degradation of heterojunction lasers during aging and upon irradiation. United States. doi:10.1070/QE2000V030N04ABEH001724.
Kochetkov, A A. Sun . "Statistical features of degradation of heterojunction lasers during aging and upon irradiation". United States. doi:10.1070/QE2000V030N04ABEH001724.
@article{osti_21454666,
title = {Statistical features of degradation of heterojunction lasers during aging and upon irradiation},
author = {Kochetkov, A A},
abstractNote = {Specific features of degradation of the GaAlAs and InGaAsP heterojunction lasers are studied during aging at 60 {sup 0}C and upon irradiation by fast particles. Analytic expressions are obtained that describe an increase in the dispersion of the threshold current distribution with the time of the operating-life test and the dose of irradiation by fast particles. (lasers)},
doi = {10.1070/QE2000V030N04ABEH001724},
journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 4,
volume = 30,
place = {United States},
year = {2000},
month = {4}
}