Giant transversal Kerr effect in magneto-plasmonic heterostructures: The scattering-matrix method
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Russian Academy of Sciences, Image Processing Systems Institute (Russian Federation)
- Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)
The magneto-optical intensity effect (transversal Kerr effect) in a metal-dielectric periodic heterostructure that consists of a metallic grating formed by subwavelength slits and a dielectric substrate magnetized along the slits is shown to be resonantly enhanced by several tens of times in the excitation region of structure eigenmodes-surface plasmon polaritons and Fabry-Perot modes. The Fourier modal and scattering-matrix methods adapted to the case of gyrotropic periodic media have been used. The resonant enhancement of the intensity effect is attributable to the phenomenon of magneto-optical nonreciprocity.
- OSTI ID:
- 21443524
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 110, Issue 5; Other Information: DOI: 10.1134/S1063776110050134; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
EXCITATION
HETEROJUNCTIONS
INTERFACES
KERR EFFECT
MAGNETIZATION
MAGNETO-OPTICAL EFFECTS
METALS
PERIODICITY
PLASMONS
POLARONS
S MATRIX
SUBSTRATES
SURFACES
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY-LEVEL TRANSITIONS
MATERIALS
MATRICES
PHYSICAL PROPERTIES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
VARIATIONS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
EXCITATION
HETEROJUNCTIONS
INTERFACES
KERR EFFECT
MAGNETIZATION
MAGNETO-OPTICAL EFFECTS
METALS
PERIODICITY
PLASMONS
POLARONS
S MATRIX
SUBSTRATES
SURFACES
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY-LEVEL TRANSITIONS
MATERIALS
MATRICES
PHYSICAL PROPERTIES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
VARIATIONS