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Title: Experimental study of the {alpha}-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

Abstract

A technique to determine experimentally the amplitude-phase coupling factor ({alpha} factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5 x 10{sup 18} to 6 x 10{sup 18} cm{sup -3}. It is shown that the {alpha} factor for such structures at the maximum of mode gain lies in the range 2 - 9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser. (lasers)

Authors:
;  [1]; ;  [2];  [3]
  1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation)
  3. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
21442701
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 30; Journal Issue: 4; Other Information: DOI: 10.1070/QE2000v030n04ABEH001721; Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; AMPLITUDES; CARRIERS; COUPLING; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM WELLS; SEMICONDUCTOR LASERS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Citation Formats

Bogatov, Alexandr P, Drakin, A E, Boltaseva, A E, Belkin, M A, and Konyaev, V P. Experimental study of the {alpha}-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers. United States: N. p., 2000. Web. doi:10.1070/QE2000V030N04ABEH001721.
Bogatov, Alexandr P, Drakin, A E, Boltaseva, A E, Belkin, M A, & Konyaev, V P. Experimental study of the {alpha}-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers. United States. doi:10.1070/QE2000V030N04ABEH001721.
Bogatov, Alexandr P, Drakin, A E, Boltaseva, A E, Belkin, M A, and Konyaev, V P. Sun . "Experimental study of the {alpha}-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers". United States. doi:10.1070/QE2000V030N04ABEH001721.
@article{osti_21442701,
title = {Experimental study of the {alpha}-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers},
author = {Bogatov, Alexandr P and Drakin, A E and Boltaseva, A E and Belkin, M A and Konyaev, V P},
abstractNote = {A technique to determine experimentally the amplitude-phase coupling factor ({alpha} factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5 x 10{sup 18} to 6 x 10{sup 18} cm{sup -3}. It is shown that the {alpha} factor for such structures at the maximum of mode gain lies in the range 2 - 9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser. (lasers)},
doi = {10.1070/QE2000V030N04ABEH001721},
journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 4,
volume = 30,
place = {United States},
year = {2000},
month = {4}
}