Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses

Journal Article · Sat Jan 31 00:00:00 EST 1998 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE1998V028N01ABEH001125· OSTI ID:21435914

Volkov, Roman V; Gordienko, Vyacheslav M; Savel'ev, Andrei B ^[1]; Dzhidzhoev, M S; Kamenev, B V; Kashkarov, Pavel K; Ponomarev, Yu V; Timoshenko, Viktor Yu; Shashkov, Alexander A ^[2]

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1. International Laser Center, M. V. Lomonosov Moscow State University, Moscow (Russian Federation)
2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)

Irradiation of porous (with porosity in excess of 70%) silicon target with femtosecond laser pulses of 10{sup 16} W cm{sup -2} intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiation with photon energies E > 8 keV. The increase was 30-fold for E > 2.5 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated. (letters to the editor)

• OSTI ID: 21435914
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 28, Issue 1; Other Information: DOI: 10.1070/QE1998v028n01ABEH001125; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EFFICIENCY
HARD X RADIATION
KEV RANGE
LASER RADIATION
LUMINESCENCE
PHOTONS
POROSITY
POROUS MATERIALS
PULSED IRRADIATION
PULSES
SILICON
BOSONS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
ENERGY RANGE
IONIZING RADIATIONS
IRRADIATION
MASSLESS PARTICLES
MATERIALS
PHOTON EMISSION
RADIATIONS
SEMIMETALS
X RADIATION