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Title: In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3463162· OSTI ID:21431063
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  1. Japan Synchrotron Radiation Research Institute / SPring-8, Kouto, Sayo, Sayo, Hyogo 679-5198 (Japan)
  2. Tokyo Institute of Technology, 4259-J2-43, Nagatsuta, Midori, Yokohama 226-8502 (Japan)
  3. XFEL Project Head Office, RIKEN / SPring-8, Kouto, Sayo, Sayo, Hyogo 679-5148 (Japan)

We developed an in-situ measurement system for characterizing the relationship between ferroelectricity and lattice distortion of a ferroelectric thin film at BL13XU, SPring-8. The dielectric polarization obtained and the lattice strain evaluated provide us with the electrostrictive coefficient of the film. The system for the method consists of a refractive lens for two dimensional micron focusing, ferroelectric characterization system, high-precision four-circle diffractometer, and time-resolved photon counting system. It enables in-situ measurements of the electric polarization of the film and an electric-field-induced strain using nano-second order time-resolved synchrotron diffraction. We applied the method to determining the lattice constant distorted by the electric field and the polarization value of a 410 nm-thick BiFeO{sub 3} thin film. The piezoelectric constant d{sub 33} evaluated was about 28 pm/V. The polarization observed allowed us to evaluate an electrostrictive coefficient Q of 1{center_dot}4x10{sup -2} m{sup 4}/C{sup 2}.

OSTI ID:
21431063
Journal Information:
AIP Conference Proceedings, Vol. 1234, Issue 1; Conference: SRI 2009: 10. international conference on radiation instrumentation, Melbourne (Australia), 27 Sep - 2 Oct 2009; Other Information: DOI: 10.1063/1.3463162; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English