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Title: In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field

Abstract

We developed an in-situ measurement system for characterizing the relationship between ferroelectricity and lattice distortion of a ferroelectric thin film at BL13XU, SPring-8. The dielectric polarization obtained and the lattice strain evaluated provide us with the electrostrictive coefficient of the film. The system for the method consists of a refractive lens for two dimensional micron focusing, ferroelectric characterization system, high-precision four-circle diffractometer, and time-resolved photon counting system. It enables in-situ measurements of the electric polarization of the film and an electric-field-induced strain using nano-second order time-resolved synchrotron diffraction. We applied the method to determining the lattice constant distorted by the electric field and the polarization value of a 410 nm-thick BiFeO{sub 3} thin film. The piezoelectric constant d{sub 33} evaluated was about 28 pm/V. The polarization observed allowed us to evaluate an electrostrictive coefficient Q of 1{center_dot}4x10{sup -2} m{sup 4}/C{sup 2}.

Authors:
 [1]; ; ;  [2];  [3];  [1]
  1. Japan Synchrotron Radiation Research Institute / SPring-8, Kouto, Sayo, Sayo, Hyogo 679-5198 (Japan)
  2. Tokyo Institute of Technology, 4259-J2-43, Nagatsuta, Midori, Yokohama 226-8502 (Japan)
  3. XFEL Project Head Office, RIKEN / SPring-8, Kouto, Sayo, Sayo, Hyogo 679-5148 (Japan)
Publication Date:
OSTI Identifier:
21431063
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1234; Journal Issue: 1; Conference: SRI 2009: 10. international conference on radiation instrumentation, Melbourne (Australia), 27 Sep - 2 Oct 2009; Other Information: DOI: 10.1063/1.3463162; (c) 2010 American Institute of Physics; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCURACY; BISMUTH COMPOUNDS; DIFFRACTION; DIFFRACTOMETERS; ELECTRIC FIELDS; FERRITES; FERROELECTRIC MATERIALS; LATTICE PARAMETERS; PHOTONS; PIEZOELECTRICITY; POLARIZATION; PULSES; SPRING-8 STORAGE RING; STRAINS; SYNCHROTRONS; THIN FILMS; TIME RESOLUTION; TWO-DIMENSIONAL CALCULATIONS; ACCELERATORS; BOSONS; COHERENT SCATTERING; CYCLIC ACCELERATORS; DIELECTRIC MATERIALS; ELECTRICITY; ELEMENTARY PARTICLES; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MASSLESS PARTICLES; MATERIALS; MEASURING INSTRUMENTS; OXYGEN COMPOUNDS; RADIATION SOURCES; RESOLUTION; SCATTERING; STORAGE RINGS; SYNCHROTRON RADIATION SOURCES; TIMING PROPERTIES; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Sakata, O, JST-CREST, Sanbancho Bldg., 5, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Yasui, S, Yamada, T, Funakubo, H, Yabashi, M, and Kimura, S. In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field. United States: N. p., 2010. Web. doi:10.1063/1.3463162.
Sakata, O, JST-CREST, Sanbancho Bldg., 5, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Yasui, S, Yamada, T, Funakubo, H, Yabashi, M, & Kimura, S. In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field. United States. https://doi.org/10.1063/1.3463162
Sakata, O, JST-CREST, Sanbancho Bldg., 5, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Yasui, S, Yamada, T, Funakubo, H, Yabashi, M, and Kimura, S. Wed . "In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field". United States. https://doi.org/10.1063/1.3463162.
@article{osti_21431063,
title = {In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field},
author = {Sakata, O and JST-CREST, Sanbancho Bldg., 5, Sanbancho, Chiyoda-ku, Tokyo 102-0075 and Yasui, S and Yamada, T and Funakubo, H and Yabashi, M and Kimura, S},
abstractNote = {We developed an in-situ measurement system for characterizing the relationship between ferroelectricity and lattice distortion of a ferroelectric thin film at BL13XU, SPring-8. The dielectric polarization obtained and the lattice strain evaluated provide us with the electrostrictive coefficient of the film. The system for the method consists of a refractive lens for two dimensional micron focusing, ferroelectric characterization system, high-precision four-circle diffractometer, and time-resolved photon counting system. It enables in-situ measurements of the electric polarization of the film and an electric-field-induced strain using nano-second order time-resolved synchrotron diffraction. We applied the method to determining the lattice constant distorted by the electric field and the polarization value of a 410 nm-thick BiFeO{sub 3} thin film. The piezoelectric constant d{sub 33} evaluated was about 28 pm/V. The polarization observed allowed us to evaluate an electrostrictive coefficient Q of 1{center_dot}4x10{sup -2} m{sup 4}/C{sup 2}.},
doi = {10.1063/1.3463162},
url = {https://www.osti.gov/biblio/21431063}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1234,
place = {United States},
year = {2010},
month = {6}
}