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Title: Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3518307· OSTI ID:21428737
;  [1]; ;  [2]
  1. Science des Procedes Ceramiques et de Traitements de surface (SPCTS-CNRS UMR 6638), ENSCI 47 avenue Albert Thomas 87065 Limoges Cedex (France)
  2. Laboratoires des Materiaux et du Genie Physique (LMGP-CNRS UMR 5628), Grenoble INP, Minatec 3 parvis Louis Neel, BP 257, 38016 Grenoble Cedex 01 (France)

Stacking faults (SFs) and the 3C-6H polytypic transition in thick (001)-oriented 3C-SiC crystals are studied by means of diffuse X-ray scattering. The presence of SFs lying in the {l_brace}111{r_brace} planes gives rise to streaked reciprocal lattice points with the streaks being parallel to the <111> directions. In the case of low SF densities the defects are uncorrelated and the simulation of the diffuse intensity distribution allows to derive the SF density. In partially transformed crystals, the SFs are spatially correlated which gives rise to an intense and asymmetric diffuse scattering distribution. Its simulation allows to determine both the transformation mechanism and the transformation level.

OSTI ID:
21428737
Journal Information:
AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518307; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English