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Title: Acceptor Type Vacancy Complexes In As-Grown ZnO

Abstract

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap ({approx}3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li{sub Zn} and Na{sub Zn} acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Authors:
;  [1];  [2]
  1. Department of Applied Physics, Aalto University, P.O. Box 11100, Fin-00076 Aalto, Espoo (Finland)
  2. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)
Publication Date:
OSTI Identifier:
21428735
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1292; Journal Issue: 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518301; (c) 2010 American Institute of Physics; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNIHILATION; CRYSTAL GROWTH; DOPED MATERIALS; DOPPLER BROADENING; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EV RANGE; GAMMA SPECTROSCOPY; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; POSITRONS; SEMICONDUCTOR MATERIALS; THIN FILMS; VACANCIES; ZINC OXIDES; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY RANGE; EPITAXY; FERMIONS; FILMS; INTERACTIONS; LEPTONS; LINE BROADENING; MATERIALS; MATTER; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; POINT DEFECTS; SPECTROSCOPY; ZINC COMPOUNDS

Citation Formats

Zubiaga, A, Tuomisto, F, and Zuniga-Perez, J. Acceptor Type Vacancy Complexes In As-Grown ZnO. United States: N. p., 2010. Web. doi:10.1063/1.3518301.
Zubiaga, A, Tuomisto, F, & Zuniga-Perez, J. Acceptor Type Vacancy Complexes In As-Grown ZnO. United States. doi:10.1063/1.3518301.
Zubiaga, A, Tuomisto, F, and Zuniga-Perez, J. Mon . "Acceptor Type Vacancy Complexes In As-Grown ZnO". United States. doi:10.1063/1.3518301.
@article{osti_21428735,
title = {Acceptor Type Vacancy Complexes In As-Grown ZnO},
author = {Zubiaga, A and Tuomisto, F and Zuniga-Perez, J},
abstractNote = {One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap ({approx}3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li{sub Zn} and Na{sub Zn} acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.},
doi = {10.1063/1.3518301},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1292,
place = {United States},
year = {2010},
month = {11}
}