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Title: High Zn Content Single-phase RS-MgZnO Suitable for Solar-blind Frequency Applications

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3518292· OSTI ID:21428732
; ; ; ;  [1]; ;  [2];  [3]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)
  3. ICT-MAP, Royal Institute of Technology, Electrum 229 SE-164 40, Kista-Stockholm (Sweden)

Single-phase rock-salt MgZnO films with high Zn content were successfully fabricated on the templates of MgO (111)/{alpha}-sapphire (0001) by radio-frequency plasma assisted molecular beam epitaxy. The influence of growth temperature on epitaxy of MgZnO alloy films was investigated by the combined studies of crystal structures, compositions, and optical properties. It is found that the incorporation of Zn atoms into the rock-salt MgZnO films is greatly enhanced at low temperature, confirmed by in-situ reflection high-energy electron diffraction observations and ex-situ X-ray diffraction characterization. Zn fraction in the single-phase rock-salt Mg{sub 0.53}Zn{sub 0.47}O film was determined by Rutherford backscattering spectrometry. Optical properties of the films were investigated by transmittance spectroscopy and reflectance spectroscopy, both of which demonstrate the solar-blind band gap and its dependence on Zn content.

OSTI ID:
21428732
Journal Information:
AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518292; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English