Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon

Journal Article · Mon Nov 01 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3518286· OSTI ID:21428727

Jiao, S ^[1]; Zielinski, M; Chassagne, T ^[2]; Roy, S ^[3]; Michaud, J F; Alquier, D ^[1]; Portail, M ^[4]

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1. Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)
2. NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France)
3. Saint Gobain recherche, 39 Quai Lucien Lefranc 93300 Aubervilliers cedex (France)
4. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne (France)

In this work we investigated the influence of the Si substrate misorientation and 3C-SiC film thickness on the density of Anti-Phase Boundaries, in order to better understand the mechanism of antiphase domain annihilation. The two highlights in our work are the utilization of [001] orientated Si on-axis wafer with spherical dimples, which gave us access to a continuum of off-cut angles (0 deg. to {approx}11 deg.) and directions, and the deposition of elongated silicon islands on the surface of 3C-SiC epilayers, which improved the detection of APDs by analysis of Scanning Electron Microscopy images. We found that for a given layer thickness the relative surface occupation of one domain increases with the off-cut angle value, leading to single domain film up to a certain angle. This critical value is reduced as the film is thickened.

• OSTI ID: 21428727
• Journal Information: AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518286; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
DEPOSITION
DISLOCATIONS
EPITAXY
FILMS
IMAGES
LAYERS
SCANNING ELECTRON MICROSCOPY
SILICON
SILICON CARBIDES
SUBSTRATES
SURFACES
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
LINE DEFECTS
MICROSCOPY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS