Zinc-blende (Cubic) GaN and AlGaN Layers, Structures and Bulk Crystals by Molecular Beam Epitaxy
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
We have studied the growth of zinc-blende GaN and AlGaN layers, structures and bulk crystals by molecular beam epitaxy (MBE). We have developed a process for growth by MBE of free-standing cubic GaN layers. Undoped thick cubic GaN films were grown on semi-insulating GaAs (001) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The resulting free-standing GaN wafers with thicknesses in the 30-100 {mu}m range may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have developed procedures to cleave the wafers into 10x10 mm{sup 2} square substrates and to polish them to produce epi-ready surfaces. The first GaN/InGaN LEDs on our zinc-blende GaN substrates have been demonstrated by our collaborators at Sharp Laboratories of Europe.
- OSTI ID:
- 21428725
- Journal Information:
- AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518284; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CRYSTAL GROWTH
CRYSTALS
CUBIC LATTICES
FILMS
GALLIUM ARSENIDES
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SCATTERING