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Title: Effects of Processing Parameters on Internal Stress of BN Films Prepared by Ion Mixing and Vapor Deposition

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3508521· OSTI ID:21428627
; ;  [1]
  1. Graduate School of Engineering, University of Hyogo, Shosha 2167, Himeji, Hyogo 671-2280 (Japan)

Boron nitride (BN) films have been attractive due to their excellent properties such as high hardness, thermal conductivity and chemical stability. In this study, BN films were prepared by depositing B vapor under simultaneous irradiation of N ions, that is ion mixing and vapor deposition (IVD) technique. The effects of processing parameters such as, acceleration voltage of N ions, transport ratio B/N and substrate temperature, on the internal stress of BN films were investigated. As a result, compressive internal stress increases at low acceleration voltage and high transport ratio B/N, which corresponded to the condition for formation of cBN phase. The hardness also becomes high at this condition and there is a strong correlation between internal stress and hardness of BN film. In addition to that, relaxation of internal stress by inserting inner layer between substrate and cBN layer has been carried out. It is confirmed that internal stress can be decreased by inner layer. Especially, relaxation of internal stress without degradation of high hardness can be achieved when the crystal structure of inner layer is hBN.

OSTI ID:
21428627
Journal Information:
AIP Conference Proceedings, Vol. 1282, Issue 1; Conference: 7. international symposium on applied plasma science, Hamburg (Germany), 31 Aug - 4 Sep 2009; Other Information: DOI: 10.1063/1.3508521; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English