Effects of Different Precursor's Concentration on the Properties of Zinc Oxide Thin Films

Journal Article · Wed Jul 07 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3469700· OSTI ID:21410547

Malek, M F; Zakaria, N; Sahdan, M Z; Mamat, M H ^[1]; Khusaimi, Z ^[2]; Rusop, M ^[1]

---

1. Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
2. NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

Zinc oxide (ZnO) thin films were successfully grown on silicon substrate with different molarities, by a sol-gel method. In the process, the molarities were varied from 0.2-1.0 M and it was found that increasing in molarities had affected the structure of ZnO thin films. The properties of the thin films were characterized and studied by ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence spectrometer (PL). It was found that the molarities affect the optical properties of the resultant ZnO thin films.

• OSTI ID: 21410547
• Journal Information: AIP Conference Proceedings, Vol. 1250, Issue 1; Conference: PERFIK2009: National physics conference 2009, Malacca (Malaysia), 7-9 Dec 2009; Other Information: DOI: 10.1063/1.3469700; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PRECURSOR
SILICON
SOL-GEL PROCESS
SPECTROMETERS
SPECTROSCOPY
SUBSTRATES
THIN FILMS
ULTRAVIOLET RADIATION
ZINC OXIDES
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
FILMS
LUMINESCENCE
MEASURING INSTRUMENTS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
ZINC COMPOUNDS