Effects of substrate temperature on properties of ITO-ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

Journal Article · Thu Oct 15 00:00:00 EDT 2009 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2009.07.025· OSTI ID:21372370

Heo, Gi-Seok; Gim, In-Gi; Park, Jong-Woon; Kim, Kwang-Young ^[1]; Kim, Tae-Won ^[1]

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1. Nanoelectronics Team, Honam Technology Service Division, Korea Institute of Industrial Technology, Gwangju 500-480 (Korea, Republic of)

We have fabricated ITO-ZnO composition spread films to investigate the effects of substrate temperature on their electrical and optical properties by using combinatorial RF magnetron sputtering. It turned out by X-ray measurement that the film with zinc contents above 16.0 at% [Zn/(In+Zn+Sn)] showed amorphous phase regardless of substrate temperature. The amorphous ITO-ZnO film had lower resistivity than polycrystalline films. When the films were deposited at 250 deg. C, the minimum resistivity of 3.0x10{sup -4} OMEGA cm was obtained with the zinc contents of 16.0 at%. The indium content could be reduced as high as {approx}30 at% compared to that of ITO for the films having similar resistivity ({approx}10{sup -4} OMEGA cm). However, a drastic increase of resistivity was observed for the ITO-ZnO films deposited at 350 deg. C, having zinc contents below 15.2 at%. - Graphical abstract: The effects of substrate temperature on properties of ITO-ZnO films were investigated by using combinatorial RF magnetron sputtering. The amorphous ITO-ZnO film had lower resistivity than polycrystalline films. The minimum resistivity of 3.0x10{sup -4} OMEGA cm was obtained with the substrate temperature of 250 deg. C and the zinc contents of 16.0 at%. The electronic states of ITO-ZnO films were discussed with related to the formation of transparent amorphous oxide semiconductor (TAOS).

• OSTI ID: 21372370
• Journal Information: Journal of Solid State Chemistry, Vol. 182, Issue 10; Other Information: DOI: 10.1016/j.jssc.2009.07.025; PII: S0022-4596(09)00337-5; Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
FILMS
MAGNETRONS
OPTICAL PROPERTIES
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
ZINC OXIDES
CHALCOGENIDES
CRYSTALS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
MATERIALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
TEMPERATURE RANGE
ZINC COMPOUNDS