Magnetism in ZnO films with Mn and Co due to hydrogen plasma irradiation

Journal Article · Mon Jan 04 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3295497· OSTI ID:21371420

Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu ^[1]

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1. Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)

High quality ZnO and magnetic element doped (Zn, Mn)O and (Zn, Co)O films were made by using a pulsed laser deposition (PLD) system. The results of X-ray diffraction measurements showed a single crystal of wurtzite structure. The ZnMnO film had electrical properties of an n-type semiconductor with carrier concentration of 5x10{sup 18} cm{sup -3}, while the ZnCoO films showed high conductance. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and Ec-0.13 eV, respectively.

• OSTI ID: 21371420
• Journal Information: AIP Conference Proceedings, Vol. 1199, Issue 1; Conference: 29. international conference on the physics of semiconductors, Rio de Janeiro (Brazil), 27 Jul - 1 Aug 2008; Other Information: DOI: 10.1063/1.3295497; (c) 2009 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CURIE POINT
DEEP LEVEL TRANSIENT SPECTROSCOPY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONS
ENERGY BEAM DEPOSITION
LASER RADIATION
MAGNETISM
MONOCRYSTALS
N-TYPE CONDUCTORS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
VACANCIES
X-RAY DIFFRACTION
ZINC OXIDES
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIFFRACTION
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
FERMIONS
IRRADIATION
LEPTONS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATIONS
SCATTERING
SPECTROSCOPY
SURFACE COATING
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
ZINC COMPOUNDS