Electric-Field Modulation of Curie Temperature in (Ga, Mn)As Field-Effect Transistor Structures with Varying Channel Thickness and Mn Compositions

Journal Article · Mon Jan 04 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3295477· OSTI ID:21371414

Nishitani, Y; Endo, M ^[1]; Chiba, D ^[2]; Matsukura, F; Ohno, H ^[1]

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1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
2. Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075 (Japan)

We have investigated the change of T{sub C} of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T{sub C}propor top{sup 0.2} is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

• OSTI ID: 21371414
• Journal Information: AIP Conference Proceedings, Vol. 1199, Issue 1; Conference: 29. international conference on the physics of semiconductors, Rio de Janeiro (Brazil), 27 Jul - 1 Aug 2008; Other Information: DOI: 10.1063/1.3295477; (c) 2009 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONCENTRATION RATIO
CURIE POINT
ELECTRIC FIELDS
FERROMAGNETIC MATERIALS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HOLES
MAGNETIC SEMICONDUCTORS
MANGANESE ARSENIDES
MODULATION
MOLECULAR BEAM EPITAXY
THICKNESS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
DIMENSIONLESS NUMBERS
DIMENSIONS
EPITAXY
GALLIUM COMPOUNDS
MAGNETIC MATERIALS
MANGANESE COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THERMODYNAMIC PROPERTIES
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE