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Title: Ti{sub 2}GaC, Ti{sub 4}GaC{sub 3} and Cr{sub 2}GaC-Synthesis, crystal growth and structure analysis of Ga-containing MAX-phases M{sub n+1}GaC{sub n} with M=Ti, Cr and n=1, 3

Journal Article · · Journal of Solid State Chemistry
; ;  [1];  [2];  [1]
  1. Institut fuer Anorganische und Analytische Chemie, Albert-Ludwigs-Universitaet Freiburg, Albertstrasse 21, D-79104 Freiburg (Germany)
  2. University of Toronto (Canada)

Single crystals of Ga-containing MAX-phases Ti{sub 2}GaC, Ti{sub 4}GaC{sub 3}, and Cr{sub 2}GaC were grown from a metallic melt generated by an excess of Ga. This technique allows the crystal growth at different temperatures to control the product distribution. Compounds developed were Ti{sub 2}GaC and TiC at 1500 deg. C, and Ti{sub 2}GaC and Ti{sub 4}GaC{sub 3} at 1300 deg. C. Crystal structures were refined from single crystal data. Ti{sub 2}GaC and Cr{sub 2}GaC were previously known, and belong to the Cr{sub 2}AlC type as well as the solid solutions V{sub 2}Ga{sub 1-x}Al{sub x}C and Cr{sub 2}Ga{sub 1-x}Al{sub x}C. Ti{sub 4}GaC{sub 3} is one of the few 413-phases (P6{sub 3}/mmc, a=3.0690(4) A, c=23.440(5) A) and the first Ga-containing representative. The crystal structures of MAX-phases are intergrowths of layers of an intermetallic MGa in a hexagonal stacking sequence with carbidic layers (MC){sub n} of the NaCl type. The thickness of the layer depends from the value of n. The results of the structure refinements also demonstrate that also the structural details follow this description. - Graphical abstract: Single crystals of Ga-containing MAX-Phases (TiC){sub n}(TiGa) (n=1, 3) were grown from a metallic melt including and characterised by X-ray diffraction. Ti{sub 4}GaC{sub 3} is one of the few 413-phase and the first containing Ga.

OSTI ID:
21370368
Journal Information:
Journal of Solid State Chemistry, Vol. 182, Issue 5; Other Information: DOI: 10.1016/j.jssc.2009.01.003; PII: S0022-4596(09)00006-1; Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English