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Title: Epitaxial growth and structure of (La{sub 1-x}Lu{sub x}){sub 2}O{sub 3} alloys on Si(111)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3460272· OSTI ID:21367015
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  1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

LaLuO{sub 3} layers are epitaxially grown on Si(111) by molecular beam epitaxy using high temperature effusion sources. Samples are prepared by simultaneous as well as alternating growth of La{sub 2}O{sub 3} and Lu{sub 2}O{sub 3}. Grazing incidence x-ray diffraction indicates that the resulting crystal structure of the alloys is cubic. Simultaneous and alternating growth with a monolayer period lead to the same distribution of La and Lu with no preferential ordering. In all cases the lattice mismatch to Si is less than 0.6%. The experimental results are analyzed by studying the energetics of hexagonal, bixbyite, and perovskite (La{sub 1-x}Lu{sub x}){sub 2}O{sub 3} crystal structures employing density functional theory.

OSTI ID:
21367015
Journal Information:
Applied Physics Letters, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.3460272; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English