Epitaxial growth and structure of (La{sub 1-x}Lu{sub x}){sub 2}O{sub 3} alloys on Si(111)
- Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
LaLuO{sub 3} layers are epitaxially grown on Si(111) by molecular beam epitaxy using high temperature effusion sources. Samples are prepared by simultaneous as well as alternating growth of La{sub 2}O{sub 3} and Lu{sub 2}O{sub 3}. Grazing incidence x-ray diffraction indicates that the resulting crystal structure of the alloys is cubic. Simultaneous and alternating growth with a monolayer period lead to the same distribution of La and Lu with no preferential ordering. In all cases the lattice mismatch to Si is less than 0.6%. The experimental results are analyzed by studying the energetics of hexagonal, bixbyite, and perovskite (La{sub 1-x}Lu{sub x}){sub 2}O{sub 3} crystal structures employing density functional theory.
- OSTI ID:
- 21367015
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.3460272; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CRYSTAL DEFECTS
CRYSTAL GROWTH
DENSITY FUNCTIONAL METHOD
LANTHANUM ALLOYS
LANTHANUM OXIDES
LUTETIUM ALLOYS
LUTETIUM OXIDES
MOLECULAR BEAM EPITAXY
PEROVSKITE
X-RAY DIFFRACTION
ALLOYS
CALCULATION METHODS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIFFRACTION
EPITAXY
LANTHANUM COMPOUNDS
LUTETIUM COMPOUNDS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PEROVSKITES
RARE EARTH ALLOYS
RARE EARTH COMPOUNDS
SCATTERING
VARIATIONAL METHODS