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Title: Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors

Abstract

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Authors:
; ; ; ; ;  [1]
  1. Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
21366993
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 96; Journal Issue: 25; Other Information: DOI: 10.1063/1.3457388; (c) 2010 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON TETRAFLUORIDE; DIELECTRIC MATERIALS; FLUORINE; GALLIUM ARSENIDES; HAFNIUM OXIDES; HYSTERESIS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; MOSFET; SEMICONDUCTOR MATERIALS; X-RAY PHOTOELECTRON SPECTROSCOPY; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL ANALYSIS; ELECTRON SPECTROSCOPY; ELEMENTS; FIELD EFFECT TRANSISTORS; FLUORINATED ALIPHATIC HYDROCARBONS; GALLIUM COMPOUNDS; HAFNIUM COMPOUNDS; HALOGENATED ALIPHATIC HYDROCARBONS; HALOGENS; INDIUM COMPOUNDS; MATERIALS; MICROANALYSIS; MOS TRANSISTORS; NONDESTRUCTIVE ANALYSIS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC FLUORINE COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SPECTRA; SPECTROSCOPY; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Chen Yenting, Zhao Han, Wang Yanzhen, Xue Fei, Zhou Fei, and Lee, Jack C. Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors. United States: N. p., 2010. Web. doi:10.1063/1.3457388.
Chen Yenting, Zhao Han, Wang Yanzhen, Xue Fei, Zhou Fei, & Lee, Jack C. Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors. United States. doi:10.1063/1.3457388.
Chen Yenting, Zhao Han, Wang Yanzhen, Xue Fei, Zhou Fei, and Lee, Jack C. Mon . "Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors". United States. doi:10.1063/1.3457388.
@article{osti_21366993,
title = {Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors},
author = {Chen Yenting and Zhao Han and Wang Yanzhen and Xue Fei and Zhou Fei and Lee, Jack C.},
abstractNote = {In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.},
doi = {10.1063/1.3457388},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 96,
place = {United States},
year = {2010},
month = {6}
}