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Title: Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

Abstract

We present a detailed study of the thermal evolution of H ion-induced vacancy related complexes and voids in bulk GaN implanted under ion-cut conditions. By using transmission electron microscopy, we found that the damage band in as-implanted GaN is decorated with a high density of nanobubbles of approx1-2 nm in diameter. Variable energy Doppler broadening spectroscopy showed that this band contains vacancy clusters and voids. In addition to vacancy clusters, the presence of V{sub Ga}, V{sub Ga}-H{sub 2}, and V{sub Ga}V{sub N} complexes was evidenced by pulsed low-energy positron lifetime spectroscopy. Subtle changes upon annealing in these vacancy complexes were also investigated. As a general trend, a growth in open-volume defects is detected in parallel to an increase in both size and density of nanobubbles. The observed vacancy complexes appear to be stable during annealing. However, for temperatures above 450 deg. C, unusually large lifetimes were measured. These lifetimes are attributed to the formation of positronium in GaN. Since the formation of positronium is not possible in a dense semiconductor, our finding demonstrates the presence of sufficiently large open-volume defects in this temperature range. Based on the Tao-Eldrup model, the average lattice opening during thermal annealing was quantified. We foundmore » that a void diameter of 0.4 nm is induced by annealing at 600 deg. C. The role of these complexes in the subsurface microcracking is discussed.« less

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) 06120 (Germany)
Publication Date:
OSTI Identifier:
21366704
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 81; Journal Issue: 11; Other Information: DOI: 10.1103/PhysRevB.81.115205; (c) 2010 The American Physical Society; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COMPLEXES; CRYSTAL DEFECTS; DENSITY; DOPPLER BROADENING; GALLIUM NITRIDES; HYDROGEN IONS; ION IMPLANTATION; LIFETIME; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; POSITRONIUM; POSITRONS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TEMPERATURE RANGE; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; LEPTONS; LINE BROADENING; MATERIALS; MATTER; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS

Citation Formats

Moutanabbir, O, Scholz, R, Goesele, U, Guittoum, A, Jungmann, M, Butterling, M, Krause-Rehberg, R, Anwand, W, Egger, W, Sperr, P, Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, Halle, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, and Universitaet der Bundeswehr, Werner-Heisenberg-Weg 39, 85579 Neubiberg. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN. United States: N. p., 2010. Web. doi:10.1103/PHYSREVB.81.115205.
Moutanabbir, O, Scholz, R, Goesele, U, Guittoum, A, Jungmann, M, Butterling, M, Krause-Rehberg, R, Anwand, W, Egger, W, Sperr, P, Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, Halle, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, & Universitaet der Bundeswehr, Werner-Heisenberg-Weg 39, 85579 Neubiberg. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN. United States. https://doi.org/10.1103/PHYSREVB.81.115205
Moutanabbir, O, Scholz, R, Goesele, U, Guittoum, A, Jungmann, M, Butterling, M, Krause-Rehberg, R, Anwand, W, Egger, W, Sperr, P, Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, Halle, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, and Universitaet der Bundeswehr, Werner-Heisenberg-Weg 39, 85579 Neubiberg. Mon . "Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN". United States. https://doi.org/10.1103/PHYSREVB.81.115205.
@article{osti_21366704,
title = {Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN},
author = {Moutanabbir, O and Scholz, R and Goesele, U and Guittoum, A and Jungmann, M and Butterling, M and Krause-Rehberg, R and Anwand, W and Egger, W and Sperr, P and Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, Halle and Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden and Universitaet der Bundeswehr, Werner-Heisenberg-Weg 39, 85579 Neubiberg},
abstractNote = {We present a detailed study of the thermal evolution of H ion-induced vacancy related complexes and voids in bulk GaN implanted under ion-cut conditions. By using transmission electron microscopy, we found that the damage band in as-implanted GaN is decorated with a high density of nanobubbles of approx1-2 nm in diameter. Variable energy Doppler broadening spectroscopy showed that this band contains vacancy clusters and voids. In addition to vacancy clusters, the presence of V{sub Ga}, V{sub Ga}-H{sub 2}, and V{sub Ga}V{sub N} complexes was evidenced by pulsed low-energy positron lifetime spectroscopy. Subtle changes upon annealing in these vacancy complexes were also investigated. As a general trend, a growth in open-volume defects is detected in parallel to an increase in both size and density of nanobubbles. The observed vacancy complexes appear to be stable during annealing. However, for temperatures above 450 deg. C, unusually large lifetimes were measured. These lifetimes are attributed to the formation of positronium in GaN. Since the formation of positronium is not possible in a dense semiconductor, our finding demonstrates the presence of sufficiently large open-volume defects in this temperature range. Based on the Tao-Eldrup model, the average lattice opening during thermal annealing was quantified. We found that a void diameter of 0.4 nm is induced by annealing at 600 deg. C. The role of these complexes in the subsurface microcracking is discussed.},
doi = {10.1103/PHYSREVB.81.115205},
url = {https://www.osti.gov/biblio/21366704}, journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 11,
volume = 81,
place = {United States},
year = {2010},
month = {3}
}