Adjustable resonance frequency and linewidth by Zr doping in Co thin films

Journal Article · Sun Nov 15 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3260238· OSTI ID:21361931

Changjun, Jiang; Desheng, Xue; Dangwei, Guo; Xiaolong, Fan ^[1]

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1. Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000 (China)

Co{sub 100-x}Zr{sub x} (40 nm) thin films with different Zr compositions were grown on silicon substrates by radio frequency magnetron sputtering. The coercivity decreased with an increase in the Zr composition. A uniaxial anisotropy existed in the Co{sub 100-x}Zr{sub x} films, and the anisotropy field of the films decreased from 55 to 40 Oe with the increase of Zr composition. The resonance frequency and linewidth were decreased with the increase of the Zr composition during the permeability measurements. For samples with x=0 and 9, the magnetic anisotropy effective field and saturated field were obtained by fitting the external magnetic field dependent resonance frequency with Landau-Lifschitz-Gilbert equation. Therefore, it is an effective way to get the adjustable anisotropy field and linewidth, which is desirable for obtaining the high resonance and high permeability ferromagnetic film materials for high frequency application.

• OSTI ID: 21361931
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 10; Other Information: DOI: 10.1063/1.3260238; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
COBALT ALLOYS
COERCIVE FORCE
DEPOSITION
EQUATIONS
FERROMAGNETIC MATERIALS
MAGNETIC FIELDS
MAGNETIC SUSCEPTIBILITY
PERMEABILITY
RADIOWAVE RADIATION
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
ZIRCONIUM ALLOYS
ALLOYS
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MATERIALS
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
TRANSITION ELEMENT ALLOYS