Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg{sub 8} structure
Abstract
An extended x-ray absorption fine structure (EXAFS) investigation has been carried out on arsenic-doped Hg{sub 70}Cd{sub 30}Te samples. The incorporation of atomic arsenic has been achieved using a nonconventional radio-frequency plasma source in a molecular beam epitaxy reactor. Two samples from the same epitaxial wafer have been studied. One underwent a 400 deg. C activation annealing under Hg pressure, leading to n to p-type conversion. In the commonly admitted scenario, this conversion is associated with the annealing-induced migration of As from a Hg site to a Te site. This study shows that this is not the case. Before annealing, As is found to be involved in noncrystalline structures: 50% inside an As{sub 2}Te{sub 3} chalcogenide glass and 50% inside a new AsHg{sub 8} compact structure. After annealing, the As{sub 2}Te{sub 3} chalcogenide glass disappears, 31% of As occupies Hg sites and 69% incorporates inside this new AsHg{sub 8} compact structure that occupies Te sites. The EXAFS results are in excellent agreement with 77 K Hall-effect measurements. The new AsHg{sub 8} structure is found to have an acceptor behavior. Overall, this study provides an entirely new vision of extrinsic p-type doping of HgCdTe as well as the first experimental evidence ofmore »
- Authors:
-
- CEA-INAC, 17 Av. des Martyrs, 38054 Grenoble Cedex 9 (France)
- CEA-LETI-Minatec, 17 Av. des Martyrs, 38054 Grenoble Cedex 9 (France)
- Publication Date:
- OSTI Identifier:
- 21361922
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 10; Other Information: DOI: 10.1063/1.3255989; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTROSCOPY; ANNEALING; ARSENIC; ARSENIC TELLURIDES; CADMIUM TELLURIDES; CRYSTAL GROWTH; DOPED MATERIALS; FINE STRUCTURE; HALL EFFECT; MERCURY TELLURIDES; MOLECULAR BEAM EPITAXY; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; THIN FILMS; X-RAY SPECTROSCOPY; ARSENIC COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTS; EPITAXY; FILMS; HEAT TREATMENTS; MATERIALS; MERCURY COMPOUNDS; RADIATIONS; SEMIMETALS; SORPTION; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS
Citation Formats
Biquard, X, Alliot, I, and Ballet, P. Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg{sub 8} structure. United States: N. p., 2009.
Web. doi:10.1063/1.3255989.
Biquard, X, Alliot, I, & Ballet, P. Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg{sub 8} structure. United States. https://doi.org/10.1063/1.3255989
Biquard, X, Alliot, I, and Ballet, P. 2009.
"Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg{sub 8} structure". United States. https://doi.org/10.1063/1.3255989.
@article{osti_21361922,
title = {Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg{sub 8} structure},
author = {Biquard, X and Alliot, I and Ballet, P},
abstractNote = {An extended x-ray absorption fine structure (EXAFS) investigation has been carried out on arsenic-doped Hg{sub 70}Cd{sub 30}Te samples. The incorporation of atomic arsenic has been achieved using a nonconventional radio-frequency plasma source in a molecular beam epitaxy reactor. Two samples from the same epitaxial wafer have been studied. One underwent a 400 deg. C activation annealing under Hg pressure, leading to n to p-type conversion. In the commonly admitted scenario, this conversion is associated with the annealing-induced migration of As from a Hg site to a Te site. This study shows that this is not the case. Before annealing, As is found to be involved in noncrystalline structures: 50% inside an As{sub 2}Te{sub 3} chalcogenide glass and 50% inside a new AsHg{sub 8} compact structure. After annealing, the As{sub 2}Te{sub 3} chalcogenide glass disappears, 31% of As occupies Hg sites and 69% incorporates inside this new AsHg{sub 8} compact structure that occupies Te sites. The EXAFS results are in excellent agreement with 77 K Hall-effect measurements. The new AsHg{sub 8} structure is found to have an acceptor behavior. Overall, this study provides an entirely new vision of extrinsic p-type doping of HgCdTe as well as the first experimental evidence of As site transfer induced by annealing.},
doi = {10.1063/1.3255989},
url = {https://www.osti.gov/biblio/21361922},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 106,
place = {United States},
year = {Sun Nov 15 00:00:00 EST 2009},
month = {Sun Nov 15 00:00:00 EST 2009}
}