Upper critical field and Raman spectra of MgB{sub 2} thin films irradiated with low energy oxygen ion

Wang, J; Li, J; Zheng, D N; Zhuang, C G; Wang, Y Z; Feng, Q R

doi:10.1063/1.3256154

Title: Upper critical field and Raman spectra of MgB{sub 2} thin films irradiated with low energy oxygen ion

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Abstract

The structure, upper critical field, and Raman spectrum of epitaxial MgB{sub 2} thin films irradiated by 300 keV O{sub 2}{sup +} ions have been investigated. Lattice parameter c expands after irradiation. There is a significant increase in upper critical field in the moderately irradiated films, while the critical temperature is reduced slightly. The values of critical field at zero temperature exhibit a maximum for samples with a moderate irradiation level for the applied magnetic field both perpendicular and parallel to the film surface. The temperature dependence of the anisotropy parameter, which is defined as the ratio of the upper critical field with the field parallel to the film surface and perpendicular to the film surface, reveals that oxygen ion irradiation mainly affects the sigma band at a low irradiation level. With increasing irradiation level, pi band scattering is strongly enhanced, and finally both bands are in the dirty limit. A broad peak centered around 570 cm{sup -1} is observed in the Raman spectrum of the unirradiated films, and the peak position has a visible redshift in the irradiated samples. In particular, high-frequency spectral structures appear and become dominant, while the E{sub 2g} broad band diminishes gradually with increasing irradiation fluence.more »« less

Authors:

Wang, J; Li, J; Zheng, D N ^[1]; Zhuang, C G; Wang, Y Z; Feng, Q R ^[2]

National Laboratory for Superconductivity, Institute of Physics and National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China)
Department of Physics, Peking University, Beijing 100871 (China)

Publication Date:: Sun Nov 01 00:00:00 EDT 2009

OSTI Identifier:: 21361910

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 106; Journal Issue: 9; Other Information: DOI: 10.1063/1.3256154; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ANISOTROPY; CRITICAL FIELD; CRITICAL TEMPERATURE; EPITAXY; ION BEAMS; LATTICE PARAMETERS; MAGNESIUM BORIDES; OXYGEN IONS; RAMAN SPECTRA; RED SHIFT; SCATTERING; SELECTION RULES; SUPERCONDUCTORS; TEMPERATURE DEPENDENCE; THIN FILMS; ALKALINE EARTH METAL COMPOUNDS; BEAMS; BORIDES; BORON COMPOUNDS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; FILMS; IONS; MAGNESIUM COMPOUNDS; MAGNETIC FIELDS; PHYSICAL PROPERTIES; SPECTRA; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE

Citation Formats


                    Wang, J, Li, J, Zheng, D N, Zhuang, C G, Wang, Y Z, and Feng, Q R. Upper critical field and Raman spectra of MgB{sub 2} thin films irradiated with low energy oxygen ion.  United States: N. p., 2009. 
        Web.  doi:10.1063/1.3256154.

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                    Wang, J, Li, J, Zheng, D N, Zhuang, C G, Wang, Y Z, & Feng, Q R. Upper critical field and Raman spectra of MgB{sub 2} thin films irradiated with low energy oxygen ion.  United States.  https://doi.org/10.1063/1.3256154

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                    Wang, J, Li, J, Zheng, D N, Zhuang, C G, Wang, Y Z, and Feng, Q R. 2009.  
        "Upper critical field and Raman spectra of MgB{sub 2} thin films irradiated with low energy oxygen ion".  United States.  https://doi.org/10.1063/1.3256154.

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@article{osti_21361910,

  title        = {Upper critical field and Raman spectra of MgB{sub 2} thin films irradiated with low energy oxygen ion},

  author       = {Wang, J and Li, J and Zheng, D N and Zhuang, C G and Wang, Y Z and Feng, Q R},

  abstractNote = {The structure, upper critical field, and Raman spectrum of epitaxial MgB{sub 2} thin films irradiated by 300 keV O{sub 2}{sup +} ions have been investigated. Lattice parameter c expands after irradiation. There is a significant increase in upper critical field in the moderately irradiated films, while the critical temperature is reduced slightly. The values of critical field at zero temperature exhibit a maximum for samples with a moderate irradiation level for the applied magnetic field both perpendicular and parallel to the film surface. The temperature dependence of the anisotropy parameter, which is defined as the ratio of the upper critical field with the field parallel to the film surface and perpendicular to the film surface, reveals that oxygen ion irradiation mainly affects the sigma band at a low irradiation level. With increasing irradiation level, pi band scattering is strongly enhanced, and finally both bands are in the dirty limit. A broad peak centered around 570 cm{sup -1} is observed in the Raman spectrum of the unirradiated films, and the peak position has a visible redshift in the irradiated samples. In particular, high-frequency spectral structures appear and become dominant, while the E{sub 2g} broad band diminishes gradually with increasing irradiation fluence. The results are discussed by considering the disorder-induced change in carrier scattering within and between the sigma and pi bands and a violation of the Raman selection rules due to oxygen ion irradiation.},

  doi          = {10.1063/1.3256154},

  url          = {https://www.osti.gov/biblio/21361910},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 9,

  volume       = 106,

  place        = {United States},

  year         = {Sun Nov 01 00:00:00 EDT 2009},

  month        = {Sun Nov 01 00:00:00 EDT 2009}

}

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