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Title: X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors

Abstract

CdZnTe-based detectors possess unique properties as room-temperature x- and gamma-ray detectors. We report on the effects of x-ray irradiation on CdZnTe and CdTe:Cl detectors with increasing x-ray doses. We correlate the 'macroscopic' performance of the detectors, investigated by gamma-ray spectroscopy to the 'microscopic' effects induced by the impinging radiation, i.e., the defective states introduced in the crystal lattice. The electrical activity of the defects and their activation energy have been investigated by photo induced current transient spectroscopy and by space charge limited current analyses. We identify the x-ray dose that induces a significant degradation in the detector performance, and by cross-correlating the results obtained, we achieve a reliable estimate of the actual concentration of electrically active deep states and assess the potentiality of these experimental methods as tools for quantitative analyses of high resistivity materials.

Authors:
; ; ;  [1];  [2]
  1. Department of Physics, University of Bologna, viale Berti Pichat 6/2, Bologna 40127 (Italy)
  2. EURORAD24 rue du Pont, Chennevieres/Marne 94430 (France)
Publication Date:
OSTI Identifier:
21361908
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 106; Journal Issue: 9; Other Information: DOI: 10.1063/1.3253748; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CADMIUM TELLURIDES; CHLORINE; CRYSTAL DEFECTS; CRYSTAL LATTICES; GAMMA DETECTION; GAMMA RADIATION; GAMMA SPECTRA; GAMMA SPECTROSCOPY; IRRADIATION; SEMICONDUCTOR MATERIALS; SPACE CHARGE; TEMPERATURE RANGE 0273-0400 K; X-RAY DETECTION; ZINC COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; DETECTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY; HALOGENS; IONIZING RADIATIONS; MATERIALS; NONMETALS; RADIATION DETECTION; RADIATIONS; SPECTRA; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE

Citation Formats

Fraboni, B, Pasquini, L, Castaldini, A, Cavallini, A, and Siffert, P. X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors. United States: N. p., 2009. Web. doi:10.1063/1.3253748.
Fraboni, B, Pasquini, L, Castaldini, A, Cavallini, A, & Siffert, P. X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors. United States. https://doi.org/10.1063/1.3253748
Fraboni, B, Pasquini, L, Castaldini, A, Cavallini, A, and Siffert, P. 2009. "X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors". United States. https://doi.org/10.1063/1.3253748.
@article{osti_21361908,
title = {X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors},
author = {Fraboni, B and Pasquini, L and Castaldini, A and Cavallini, A and Siffert, P},
abstractNote = {CdZnTe-based detectors possess unique properties as room-temperature x- and gamma-ray detectors. We report on the effects of x-ray irradiation on CdZnTe and CdTe:Cl detectors with increasing x-ray doses. We correlate the 'macroscopic' performance of the detectors, investigated by gamma-ray spectroscopy to the 'microscopic' effects induced by the impinging radiation, i.e., the defective states introduced in the crystal lattice. The electrical activity of the defects and their activation energy have been investigated by photo induced current transient spectroscopy and by space charge limited current analyses. We identify the x-ray dose that induces a significant degradation in the detector performance, and by cross-correlating the results obtained, we achieve a reliable estimate of the actual concentration of electrically active deep states and assess the potentiality of these experimental methods as tools for quantitative analyses of high resistivity materials.},
doi = {10.1063/1.3253748},
url = {https://www.osti.gov/biblio/21361908}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 106,
place = {United States},
year = {Sun Nov 01 00:00:00 EDT 2009},
month = {Sun Nov 01 00:00:00 EDT 2009}
}