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Title: Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

Abstract

Thin films grown by Al{sub 2}O{sub 3} atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al{sub 2}O{sub 3} ALD with thicknesses of >=10 nm had a water vapor transmission rate (WVTR) of <=5x10{sup -5} g/m{sup 2} day at 38 deg. C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H{sub 2}O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of approx7x10{sup -3} g/m{sup 2} day at 38 deg. C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al{sub 2}O{sub 3} ALD film. An Al{sub 2}O{sub 3} ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from approx7x10{sup -3} to <=5x10{sup -5} g/m{sup 2} day at 38 deg. C/85% RH. The reduction in the permeability for Al{sub 2}O{sub 3} ALD on the SiN PECVD films was attributed to either Al{sub 2}O{sub 3}more » ALD sealing defects in the SiN PECVD film or improved nucleation of Al{sub 2}O{sub 3} ALD on SiN.« less

Authors:
;  [1]; ;  [2];  [2]
  1. DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)
  2. Deparment of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309 (United States)
Publication Date:
OSTI Identifier:
21359324
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 106; Journal Issue: 2; Other Information: DOI: 10.1063/1.3159639; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CHEMICAL VAPOR DEPOSITION; DIFFUSION BARRIERS; EPOXIDES; HUMIDITY; LAYERS; NUCLEATION; PERMEABILITY; PLASMA; POLYMERS; SILICON NITRIDES; SUBSTRATES; THICKNESS; THIN FILMS; WATER VAPOR; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; DIMENSIONS; FILMS; FLUIDS; GASES; MOISTURE; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC OXYGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SURFACE COATING; VAPORS

Citation Formats

Carcia, P F, McLean, R S, Groner, M D, Dameron, A A, George, S M, and Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309. Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition. United States: N. p., 2009. Web. doi:10.1063/1.3159639.
Carcia, P F, McLean, R S, Groner, M D, Dameron, A A, George, S M, & Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309. Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition. United States. doi:10.1063/1.3159639.
Carcia, P F, McLean, R S, Groner, M D, Dameron, A A, George, S M, and Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309. Wed . "Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition". United States. doi:10.1063/1.3159639.
@article{osti_21359324,
title = {Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition},
author = {Carcia, P F and McLean, R S and Groner, M D and Dameron, A A and George, S M and Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309},
abstractNote = {Thin films grown by Al{sub 2}O{sub 3} atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al{sub 2}O{sub 3} ALD with thicknesses of >=10 nm had a water vapor transmission rate (WVTR) of <=5x10{sup -5} g/m{sup 2} day at 38 deg. C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H{sub 2}O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of approx7x10{sup -3} g/m{sup 2} day at 38 deg. C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al{sub 2}O{sub 3} ALD film. An Al{sub 2}O{sub 3} ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from approx7x10{sup -3} to <=5x10{sup -5} g/m{sup 2} day at 38 deg. C/85% RH. The reduction in the permeability for Al{sub 2}O{sub 3} ALD on the SiN PECVD films was attributed to either Al{sub 2}O{sub 3} ALD sealing defects in the SiN PECVD film or improved nucleation of Al{sub 2}O{sub 3} ALD on SiN.},
doi = {10.1063/1.3159639},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 106,
place = {United States},
year = {2009},
month = {7}
}