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Title: Effect of epitaxial strain on the magneto-electric coupling of YMnO{sub 3} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3168423· OSTI ID:21359297
;  [1]; ;  [2]
  1. School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India)
  2. Department of Materials Science and Engineering, Nanostructured Materials Research Laboratory, University of Utah, Salt Lake City, Utah 84112 (United States)

We report synthesis of phase pure multiferroic YMnO{sub 3} thin films on sapphire (0001) with conducting ZnGaO buffer contact layer. Films were prepared by using pulsed laser deposition technique and characterized using x-ray diffraction, scanning electron microscopy, energy dispersive absorption spectroscopy, and magnetic field dependent dielectric measurement techniques. Structural characterizations indicated phase purity and epitaxial nature of the films. The dielectric response indicated an anomaly in dielectric constant epsilon and tan delta in the vicinity of 30 K, well below the bulk Neel temperature approx70 K. This anomaly in epsilon and tan delta and its magnetic field dependence is explained as an influence of strain due to lattice mismatch between the substrate and YMnO{sub 3} film. A substantial enhancement in magnetocapacitance was also observed for magnetic field applied parallel to ab plane of the film. Our results show that it is possible to tune the multiferroic property of YMnO{sub 3} via changes in ferroelastic route.

OSTI ID:
21359297
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 1; Other Information: DOI: 10.1063/1.3168423; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English