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Title: Multiferroic behavior and impedance spectroscopy of bilayered BiFeO{sub 3}/CoFe{sub 2}O{sub 4} thin films

Abstract

Lead-free bilayered multiferroic thin films consisting of BiFeO{sub 3} (BFO) and CoFe{sub 2}O{sub 4} (CFO) layers with different thicknesses were grown on SrRuO{sub 3}-coated Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by radio frequency sputtering. The effects of constituent layer thicknesses on the ferroelectric and magnetic behavior have been studied. The physical behaviors are shown to strongly depend on the thicknesses of the constituent layers. BFO (220 nm)/CFO (30 nm) bilayered thin film demonstrated much improved ferroelectric and ferromagnetic behavior (2P{sub r}=144.2 muC/cm{sup 2}, 2E{sub c}=778.0 kV/cm, M{sub s}=61.2 emu/cm{sup 3}, and H{sub c}=200.8 Oe) as compared to those of the single layer BFO thin film. The dielectric behavior and conductivity of BFO (220 nm)/CFO (30 nm) bilayered thin film were investigated as a function of both temperature (in the range of 294-534 K) and frequency (in the range of 10{sup -1}-10{sup 6} Hz), where an activation energy of approx1.11 eV for dielectric relaxation was demonstrated. From the conductivity behavior, an activation energies of approx0.98 eV was derived for dc conductivity are, implying that oxygen vacancies are involved in the conduction of the BFO (220 nm)/CFO (30 nm) bilayered film.

Authors:
;  [1]
  1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574 (Singapore)
Publication Date:
OSTI Identifier:
21352263
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: DOI: 10.1063/1.3153955; (c) 2009 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; BISMUTH COMPOUNDS; COBALT OXIDES; DEPOSITION; ELECTRIC CONDUCTIVITY; FERROELECTRIC MATERIALS; FERROMAGNETIC MATERIALS; IMPEDANCE; LAYERS; OXYGEN; PLATINUM; RADIOWAVE RADIATION; SILICON OXIDES; SPECTROSCOPY; SPUTTERING; STRONTIUM COMPOUNDS; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; VACANCIES; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COBALT COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY; FILMS; MAGNETIC MATERIALS; MATERIALS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; POINT DEFECTS; RADIATIONS; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Citation Formats

Jiagang, Wu, and Wang, John. Multiferroic behavior and impedance spectroscopy of bilayered BiFeO{sub 3}/CoFe{sub 2}O{sub 4} thin films. United States: N. p., 2009. Web. doi:10.1063/1.3153955.
Jiagang, Wu, & Wang, John. Multiferroic behavior and impedance spectroscopy of bilayered BiFeO{sub 3}/CoFe{sub 2}O{sub 4} thin films. United States. doi:10.1063/1.3153955.
Jiagang, Wu, and Wang, John. Mon . "Multiferroic behavior and impedance spectroscopy of bilayered BiFeO{sub 3}/CoFe{sub 2}O{sub 4} thin films". United States. doi:10.1063/1.3153955.
@article{osti_21352263,
title = {Multiferroic behavior and impedance spectroscopy of bilayered BiFeO{sub 3}/CoFe{sub 2}O{sub 4} thin films},
author = {Jiagang, Wu and Wang, John},
abstractNote = {Lead-free bilayered multiferroic thin films consisting of BiFeO{sub 3} (BFO) and CoFe{sub 2}O{sub 4} (CFO) layers with different thicknesses were grown on SrRuO{sub 3}-coated Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by radio frequency sputtering. The effects of constituent layer thicknesses on the ferroelectric and magnetic behavior have been studied. The physical behaviors are shown to strongly depend on the thicknesses of the constituent layers. BFO (220 nm)/CFO (30 nm) bilayered thin film demonstrated much improved ferroelectric and ferromagnetic behavior (2P{sub r}=144.2 muC/cm{sup 2}, 2E{sub c}=778.0 kV/cm, M{sub s}=61.2 emu/cm{sup 3}, and H{sub c}=200.8 Oe) as compared to those of the single layer BFO thin film. The dielectric behavior and conductivity of BFO (220 nm)/CFO (30 nm) bilayered thin film were investigated as a function of both temperature (in the range of 294-534 K) and frequency (in the range of 10{sup -1}-10{sup 6} Hz), where an activation energy of approx1.11 eV for dielectric relaxation was demonstrated. From the conductivity behavior, an activation energies of approx0.98 eV was derived for dc conductivity are, implying that oxygen vacancies are involved in the conduction of the BFO (220 nm)/CFO (30 nm) bilayered film.},
doi = {10.1063/1.3153955},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 105,
place = {United States},
year = {2009},
month = {6}
}