Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

Journal Article · Mon Jun 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3148293· OSTI ID:21352251

Londos, C A; Andrianakis, A ^[1]; Emtsev, V ^[2]; Ohyama, H ^[3]

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1. Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, Athens 157 84 (Greece)
2. Ioffe Physicotechnical Institute of the Russian Academy of Sciences, Politeknicheskaya ul. 26, 194021 St. Petersburg (Russian Federation)
3. Kumamoto National College of Technology, 26592, Nishigoshi, Kumamoto 861-1102 (Japan)

The annealing behavior of the oxygen and carbon impurities in Czochralski grown silicon (Cz-Si) was investigated in electron- and neutron-irradiated materials. The irradiated samples were subjected to isochronal anneals of up to approx1000 deg. C, and the evolution of oxygen and carbon concentrations was monitored by means of infrared spectroscopy from the amplitudes of the 1106 and 605 cm{sup -1} bands of the two impurities correspondingly. It was found that the electron irradiation does not affect the temperature of annealing of oxygen, although in the neutron-irradiated samples the oxygen band begins to decay in the spectra at a lower temperature than that in the nonirradiated samples. This behavior could be determined by supersaturation of vacancies mainly liberated from disordered regions in the latter material. This assists the oxygen aggregation process. Regarding carbon evolution, it was found that in the irradiated samples the annealing out of the 605 cm{sup -1} band occurs at a lower temperature than that of the nonirradiated samples. Prior to the onset of decay of the 605 cm{sup -1} band an inverse annealing stage was observed in the irradiated samples, indicating partial restoration of substitutional carbon. The general behavior was discussed with respect to the supersaturation of intrinsic defects, mainly self-interstitials. As a result, large C{sub N}(Si{sub I}){sub M} complexes are formed. There are two processes running in parallel: the recovery of substitutional carbon from carbon-related defects and C{sub N}(Si{sub I}){sub M} complexes and the transformation of C{sub N}(Si{sub I}){sub M} complexes to SiC-based precipitates. Noticeably, in electron-irradiated Ge-doped Si the inverse annealing stage of substitutional carbon is suppressed. Furthermore, our results showed that the Ge doping of Cz-Si of up to 2x10{sup 20} cm{sup -3} does not practically affect the temperature at which oxygen and carbon are completely lost in irradiated Cz-Si:Ge.

• OSTI ID: 21352251
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 12; Other Information: DOI: 10.1063/1.3148293; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
AGGLOMERATION
ANNEALING
CARBON
CRYSTAL GROWTH
CRYSTALS
DOPED MATERIALS
ELECTRON BEAMS
ELECTRONS
GERMANIUM
IMPURITIES
INFRARED SPECTRA
INTERSTITIALS
NEUTRONS
OXYGEN
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SUPERSATURATION
VACANCIES
BARYONS
BEAMS
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
HEAT TREATMENTS
LEPTON BEAMS
LEPTONS
MATERIALS
METALS
NONMETALS
NUCLEONS
PARTICLE BEAMS
POINT DEFECTS
SATURATION
SEMIMETALS
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY