Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching
- Nano-Electronic and Thin Film Lab, Nano-Electronic Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 14395 (Iran, Islamic Republic of)
Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.
- OSTI ID:
- 21347450
- Journal Information:
- Applied Physics Letters, Vol. 96, Issue 20; Other Information: DOI: 10.1063/1.3428360; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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