skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

Abstract

This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

Authors:
; ;  [1]; ;  [2]
  1. Department of Chemical Engineering, Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
  2. Department of Chemical Engineering, Laboratory for Advanced Molecular Processing (LAMP), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21347365
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 95; Journal Issue: 26; Other Information: DOI: 10.1063/1.3280864; (c) 2009 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRIC CONDUCTIVITY; GOLD; MEMORY DEVICES; PERFORMANCE; RADIOWAVE RADIATION; RANDOMNESS; SEMICONDUCTOR MATERIALS; SPUTTERING; STAINLESS STEELS; SUBSTRATES; THIN FILMS; ZINC OXIDES; ALLOYS; CARBON ADDITIONS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HIGH ALLOY STEELS; IRON ALLOYS; IRON BASE ALLOYS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; STEELS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS; ZINC COMPOUNDS

Citation Formats

Lee, Seunghyup, Kim, Heejin, Yong, Kijung, Yun, Dong-Jin, and Rhee, Shi-Woo. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices. United States: N. p., 2009. Web. doi:10.1063/1.3280864.
Lee, Seunghyup, Kim, Heejin, Yong, Kijung, Yun, Dong-Jin, & Rhee, Shi-Woo. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices. United States. https://doi.org/10.1063/1.3280864
Lee, Seunghyup, Kim, Heejin, Yong, Kijung, Yun, Dong-Jin, and Rhee, Shi-Woo. 2009. "Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices". United States. https://doi.org/10.1063/1.3280864.
@article{osti_21347365,
title = {Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices},
author = {Lee, Seunghyup and Kim, Heejin and Yong, Kijung and Yun, Dong-Jin and Rhee, Shi-Woo},
abstractNote = {This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.},
doi = {10.1063/1.3280864},
url = {https://www.osti.gov/biblio/21347365}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 95,
place = {United States},
year = {Mon Dec 28 00:00:00 EST 2009},
month = {Mon Dec 28 00:00:00 EST 2009}
}