Analysis of trap state densities at HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interfaces

Journal Article · Mon Mar 08 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3360221· OSTI ID:21347315

Hwang, Yoontae; Engel-Herbert, Roman; Rudawski, Nicholas G; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

HfO{sub 2} was deposited on n- and p-type In{sub 0.53}Ga{sub 0.47}As by chemical beam deposition. Interface trap densities (D{sub it}) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the D{sub it} to rise above 10{sup 13} cm{sup -2} eV{sup -1}. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type channels at room temperature. The apparent decrease of the D{sub it} close to the band edges is discussed.

• OSTI ID: 21347315
• Journal Information: Applied Physics Letters, Vol. 96, Issue 10; Other Information: DOI: 10.1063/1.3360221; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ENERGY GAP
EPITAXY
GALLIUM ARSENIDES
HAFNIUM OXIDES
INDIUM ARSENIDES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
FILMS
GALLIUM COMPOUNDS
HAFNIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS