Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Journal Article · Mon Mar 01 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3334682· OSTI ID:21347306

Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G; Thalhammer, Stefan ^[1]; Howgate, John; Sharp, Ian D; Stutzmann, Martin ^[2]

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1. Helmholtz Zentrum Muenchen, Ingolstaedter Landstrasse 1, 85764 Neuherberg (Germany)
2. Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the muGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

• OSTI ID: 21347306
• Journal Information: Applied Physics Letters, Vol. 96, Issue 9; Other Information: DOI: 10.1063/1.3334682; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
DOSIMETRY
ELECTRON MOBILITY
GALLIUM NITRIDES
IRRADIATION
PH VALUE
SEMICONDUCTOR MATERIALS
SENSITIVITY
SENSORS
TITRATION
TRANSISTORS
X RADIATION
CHEMICAL ANALYSIS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
IONIZING RADIATIONS
MATERIALS
MOBILITY
NITRIDES
NITROGEN COMPOUNDS
PARTICLE MOBILITY
PNICTIDES
QUANTITATIVE CHEMICAL ANALYSIS
RADIATIONS
SEMICONDUCTOR DEVICES
VOLUMETRIC ANALYSIS